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In-Depth Information
4
Conclusion
This research paper introduces a modified gate replacement algorithm that uses the
concept of dual-
T
ox
transistors. Using this approach, the normalized delay and leakage
current is analyzed for varying
T
ox
and width of a PMOS transistor. Moreover, the
approach is applied to different ISCAS and ITC'99 benchmark circuits that exhibit an
overall reduction in leakage current by 39.9% as compared to the initial leakage.
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http://www.cad.polito.it/downloads/tools/benchmarks.html
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