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compact model [8] and PTM model parameters [9] under HSPICE simulation
environment.
The OTA circuit with the desired specifications is designed with the tradi-
tional methodology as well our methodology for comparison purpose. The SPICE
simulation results as obtained from the traditional methodology are summarized
in Table. 1.
Tabl e 1.
Simulation results for design by the traditional methodology L=100nm
Parameters Specifications
Traditional
A
v
>
60
dB
41.4dB
UGB
>
45
KHz
56KHz
>
55
0
86
0
PM
CMRR
72dB
ICMR
0.065 V to 0.9 V
PSRR
80.4 dB @ (0.01 to 200)Hz
Slew rate
25V/ms
P
<
350
nW
299nW
Tabl e 2.
Simulation results for design by our methodology in two iterations L=100nm
Parameters 1
st
iterations 2
nd
iterations
A
v
56.2dB
61.4dB
UGB
54KHz
50.4KHz
60
0
60
0
PM
Tabl e 3.
Simulation results for design by our methodology L=100nm
Parameters Specifications
Our Method
A
v
>
60
dB
61.4dB
UGB
>
45
KHz
50.4KHz
>
55
0
60
0
PM
CMRR
67.7dB
ICMR
0.05 V to 1 V
PSRR
84 dB @ (0.01 to 200)Hz
Slew rate
29V/ms
P
<
350
nW
299nW
It is observed that the desired gain could not be achieved with the tradi-
tional methodology considering the channel length to be 100nm. The traditional
methodology under this circumstance demands increase of the channel length,
which means increase of the consumed area.
