Biomedical Engineering Reference
In-Depth Information
Table 9.9
(
Continued
).
Materials/
Methods
Analyte
Transducer
Main Performance
Ref.
NO
CVD-CNT films Chemiresistor CR: 0-50 ppm
S:
[256]
x
∆
R
Ω
/2 ppm
DL: 2 ppm; OT: RT
Rst: <10 min
Rct: <30 min (Rec. UV
light)
~10
NO
, NH
DEP-treated
SWCNT films
Chemiresistor
and FET
CR: NS
S: NS
DL: ppm level; OT: RT
Rst: ~a few min by gate
bias
Rct: ~a few min by gate
bias
[266]
x
3
NH
SWCNT
individual, mats
Chemiresistor
and FET
CR: 0.1-1%
S:
[33]
3
~1.5 at 1%
DL: 0.1%; OT: RT
Rst: <10 min
Rct: <60 min at RT
R
/
R
i
f
NH
PABS-modified
SWCNT layer
Chemiresistor CR: 0-100 ppm
S:
[173]
3
~30%/100 ppm
DL: 5 ppm; OT: RT
Rst: <4 min
Rct: Slow reversibility at
RT
∆
R
/
R
i
NH
Nafion-modified
SWCNT layer by
CVD
Chemiresistor
and FET
CR: 100-500 ppm
S:
[175]
3
A/500 ppm
DL: <100 ppm; OT: RT;
Rst: <1-2 min
Rct: NS
∆
I
~0.5
µ
NH
SWCNT layer
by screen-
printing
Chemiresistor CR: 5-60 ppm
S:
[260]
3
∆
R
~5%/100 ppm
DL: 5 ppm; OT: RT
Rst: <2-3 min
Rct: <10 min (heating
100°C)
/
R
i
NH
Au-modified
MWCNT
networks by RF-
PECVD
Chemiresistor CR: 5-1000 ppm
S: Mean
[248]
3
∆
R
/
R
~0.07%/
i
ppm
DL: 5 ppm; OT: 200°C;
Rst: <2-3 min; Rct: <20
min
NH
Pt-, Pd-modified
MWCNT
networks by RF-
PECVD
Chemiresistor CR: 5-1000 ppm
S: Mean
[247]
3
∆
R
/
R
~7
i
−2
×
%/ppm
DL: 5 ppm; OT: 200°C;
Rst: <2-3 min
Rct: <30 min
10
