Biomedical Engineering Reference
In-Depth Information
NO
MWCNT film
by RF-PECVD
Chemiresistor CR: 1-10 ppm
S:
[30]
2
∆
R
~12%/10 ppm
DL: <1 ppm; OT: 200°C;
Rst: <1-2 min
Rct: <30 min
/
R
i
NO
Au-modified
MWCNT film by
RF-PECVD
Chemiresistor CR: 100-1000 ppb
S: Mean
[246]
2
∆
R
~10%/ppm
DL: 100 ppb; OT: 150°C;
Rst: <2 min
Rct: <30 min
/
R
i
NO
Oxygen-treated
MWCNT film by
RF-plasma
Microhotplate
chemiresistor
CR: 0.5-10 ppm
S:
[149]
2
∆
R
~2-3 Ohm/5 ppm
DL: 500 ppb; OT: RT
Rst: <1-2 min
Rct: NS
NO
Au-, Ag-modified
MWCNT films
Chemiresistor CR: 0.5-6.5 ppm
S:
[235]
2
~5%/500 ppb
DL: 500 ppb; OT: RT
Rst: <3-5 min
Rct: NS
∆
R
/
R
i
NO
SnO
nanocrystal-
modified
MWCNT films
Chemiresistor
and FET
CR: 10-100 ppm
S:
[226]
2
2
~2%/100 ppm
DL: 10 ppm; OT: RT
Rst: <5 min; Rct: <4 min
∆
G
/
G
i
NO
Polypyrrole-
modified SWCNT
films
Chemiresistor CR: 500-3000 ppm
S:
[176]
2
~80%/3000 ppm
DL: <100 ppm; OT: RT
Rst: <10 min
Rct: Slow reversibility at
RT
∆
R
/
R
i
NO
SWCNT-CdA
LB film
nanocomposite
SAW 69 MHz
Love-mode
CR: 1-10 ppm
S:
[291]
2
∆f
°
/2 ppm
DL: <1 ppm; OT: RT
Rst: <1 min; Rct: <2-3 min
~0.1
NO
Pt-, Ru-, Ag-
modified
vertically aligned
MWCNT films
Chemiresistor CR: 0.33-3.3 ppm in LFG
S:
[36]
2
∆
R
~0.8%/2 ppm
DL: 100 ppb/LFG; OT:
150°C
Rst: <2-3 min
Rct: <20 min
/
R
i
NO, NO
SnO
-modified
MWCNTs layer
Chemiresistor CR: 2-50 ppm
S:
[224]
2
2
~2/2 ppm NO
DL: 2 ppm; OT: RT
Rst: <10 sec; Rct: <15 sec
R
/
R
i
f
NO, NO
PEI-modified
CNT films
CNTFET
CR: 2 ppb-5 ppm
S:
[272]
2
S/40 ppb
DL: 5 ppb; OT: RT
Rst: <1-2 min; Rct: <5 min
∆
G
~12
µ
(
Continued
)
