Biomedical Engineering Reference
In-Depth Information
NH
SWCNT film
by casting
Chemiresistor CR: 5-50 ppm
S:
[253]
3
∆
G
~5%/5 ppm
DL: 125 ppb; OT: RT
Rst: <5 s; Rct: <10 min
/
G
i
NH
Annealed
SWCNT film
by casting
Chemiresistor CR: 5-60 ppm
S:
[265]
3
∆
R
~8%/5 ppm
DL: 5 ppm; OT: RT
Rst: <6 min
Rct: <30 min (Rec. heating)
/
R
i
H
Pd-modified
SWCNT film
Chemiresistor CR: 4-400 ppm
S:
[232]
2
∆
G
µ
S/40 ppm
DL: 4 ppm; OT: RT
Rst: <10 s
Rct: <7-8 min
~4
H
Pd-modified
CNT layer
Schottky diode CR: 0-100%
Barrier height 52 meV
at RT
DL: NS; OT: 20-170°C
Rst: NS
Rct: NS
[233]
2
H
SWCNT LB film Optical fiber CR: 1-4%
S:
[302]
2
/4%
DL: <1%; OT: 113 K
Rst: <5 min
Rct: <11 min
∆
R
/
R
~7
×
10
−3
H
Pt-decorated
MWCNT film
Chemiresistor CR: 0-4%
S: ~1%/vol. %
DL: 100 ppm; OT: <200°C
Rst: <10 min
Rct: <20 min
[244]
2
−6
−1
NH
, CO
,
Vertically aligned
MWCNT film
Gas ionization
sensor
CR: 10
mol/l
S: ~2.5 nA/(mol/l)
DL: <10
to 10
[148]
3
2
N
, He,
Ar, Air
, O
2
2
−6
mol/l; OT: RT
Rst: <10 min
Rct: ~a few minutes
NH
, CO,
He, Ar,
N
SWCNT film
Resonator
circuit
CR: 0-2000 ppm
S: NS
DL: 100 ppm; OT: RT
Rst: <10 min
Rct: ~a few minutes
[300]
3
, O
2
2
H
, CH
,
Metal-decorated
(Pd, Pt, Rh, Sn,
Au)
SWCNT film
FET
CR: 0 -10000 ppm
S: it depends on CNT array
DL: ppm level; OT: RT
Rst: <1 min; Rct: <10 min
[242]
2
4
CO, H
S, NO
,
2
2
NH
3
(
Continued
)
