Hardware Reference
In-Depth Information
a
b
Impact of downstream
current
Leakage
V
Tn
V
DD
-
V
Tp
V
E
Number of patterns
Fig. 2.27
signature
a
b
1000
1000
800
800
600
600
400
400
200
200
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Pattern number
Number of Patterns
Fig. 2.28
Current signature at nominal V
DD
for a real defective device. (
a
) Non-ordered and
a
b
250
250
200
200
150
150
100
100
50
50
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Pattern number
Number of Patterns
Fig. 2.29
Current signature at very low V
DD
for a real defective device. (
a
) Non-ordered and
defective circuit (0:18 m NXP Semiconductors) obtained at the nominal V
DD
and
proposed signature-based methodology.