Hardware Reference
In-Depth Information
a
b
Impact of downstream
current
Leakage
V Tn
V DD - V Tp V E
Number of patterns
Fig. 2.27
Example in Fig. 2.26 a . ( a ) Downstream current vs. node voltage and ( b ) current
signature
a
b
1000
1000
800
800
600
600
400
400
200
200
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Pattern number
Number of Patterns
Fig. 2.28 Current signature at nominal V DD for a real defective device. ( a ) Non-ordered and
( b ) ordered ( Arumı 2008 )
a
b
250
250
200
200
150
150
100
100
50
50
0
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Pattern number
Number of Patterns
Fig. 2.29 Current signature at very low V DD for a real defective device. ( a ) Non-ordered and
( b ) ordered ( Arumı 2008 )
defective circuit (0:18 m NXP Semiconductors) obtained at the nominal V DD and
low V DD , respectively. Figure 2.30 illustrates the bridging defect diagnosed with the
proposed signature-based methodology.
 
 
 
 
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