Second Generation Applications of Other Types of Current Conveyors in Realizing Synthetic Impedances - Current Conveyors: Variants, Applications and Hardware Implementations - page 474

I 1

3

y z 2 1

Dual-X
CCII+

5

x 1

I 2

z 1

2

x 2

A

V G1 M 1

4

y z 2

z 1 y

M 3 9

M 2 6

Dual-X
CCII+

x 1

Dual-X
CCII+

x 1

z 2

B

x 2

C

x 2

z 1

8

V G2

7

C

Fig. 14.16 Resistorless simulation of FI using DXCCIIs proposed by Saad and Soliman (Adapted
from [ 37 ] 2010 John Wiley & Sons Ltd.)

©

2 V G 2

1
sC

μ n C ox W
L

V 3 ¼ ð V th Þ ð V 1 V 2 Þ ð 14 : 30 Þ

Hence, the Y-matrix of the circuit is given by:

μ n C ox W

2

4
sC

1 1

½ ¼ Y ð V G 1 V th Þ ð V G 2 V th Þ ð 14 : 31 Þ

L 11

for equal aspect ratios of the MOSFETs.
Thus, the value of the simulated FI is found to be:

C

L eq ¼ ð 14 : 32 Þ

μ n C ox L

2 V G 1

4 ð V th Þ ð V G 2 V th Þ

Hence, the simulated inductance can be controlled by both V G 1 and V G 2 .

14.15 Tunable MOSFET-C FDNR Using a Single DXCCII

Kacar et al. [ 38 ] presented a tunable MOSFET-C FDNR configuration employing a
single DXCCII, two capacitors and a MOSFET as a resistor as shown in Fig. 14.17 .
Assuming ideal DXCCII, the input impedance of the circuit is found to be:

1
s 2 D ¼

2
s 2 C 2 R where R

1

μ n C ox L V c

Z in ¼ ¼ ð 14 : 33 Þ

2 ð V th Þ

Thus, the value of the simulated FDNR (D) is given by: