Chemistry Reference
In-Depth Information
937. H. H. Hassan, J. L. Sculfort, M. Etman, F. Ozanam, and J.-N. Chavalviel, Kinetic and diffusional
limitations to the anodic dissolution of p-Si in fluoride media,
J. Electroanal. Chem.
380
, 55,
1995.
938. M. Etman, M. Neumann-Spallart, J.-N. Chazalviel, and F. Ozanam, Kinetic and diffusional current
contributions in the anodic dissolution of p-Si immersed in fluoride electrolytes,
J. Electroanal. Chem.
301
, 259, 1991.
939. J.-N. Chazalviel, M. Etman, and F. Ozanam, A voltammetric study of the anodic dissolution of p-Si
in fluoride electrolytes,
J. Electroanal. Chem.
297
, 533, 1991.
940. A. Belaidi, J.-N. Chazalviel, F. Ozanam, 0. Gorochov, A. Chari, B. Fotouhi, and M. Etman, Silicon
surface states and subsurface hydrogen,
J. Electroanal. Chem.
444
, 55, 1998.
941. A. Tardella and J.-N. Chazalviel, Highly accumulated electron layer at a semiconductor/electrolyte
interface,
Phys. Rev. B
32
(4), 2439, 1985.
942. J.-N. Chazalviel and M. Stefenel, Surface states induced by metal atoms at the Si/electrolyte inter-
face,
Surf. Sci.
134
, 865, 1983.
943. G. A. Parks, The isoelectric points of solid oxides, solid hydroxides, and aqueous hydroxo complex
systems,
Chem. Rev.
177
, 1965.
944. E. S. Kooij, S. M. Noordhoek, and J. J. Kelly, Reduction of peroxodisulfate at porous and crystalline
silicon electrodes: An anomaly,
J. Phys. Chem.
100
, 10754, 1996.
945. E. A. Meulenkamp, P. M. M. C. Bressers, and J. J. Kelly, Visible chemiluminescence and electrolu-
minescence of porous silicon,
Appl
.
Surf. Sci.
64
, 283, 1993.
946. W. M. Mullins and B. L. Averbach, Surface properties of silicon and aluminum oxide powders,
Surf.
Sci.
206
, 41, 1988.
947. J.-N. Chazalviel, Electrochemical transfer via surface states: A new formulation for the semi-
conductor/electrolyte interface,
J. Electrochem. Soc.
129
(5), 963, 1982.
948. F. Ozanam and J.-N. Chazalviel, In-situ infrared characterization of the electrochemical dissolution of
silicon in a fluoride electrolyte,
J. Electron Spectrosc. Relat. Phenom.
64-65
, 395, 1993.
949. J.-N. Chazalviel and F. Ozanam, A theory for the resonant response of an electrochemical system:
Self-oscillating domains, hidden oscillation, and synchronization impedance,
J. Electrochem. Soc.
139
(9), 2501, 1992.
950. J.-N. Chazalviel, C. da Fonseca, and F. Ozanam, In situ infrared study of the oscillating anodic dis-
solution of silicon in fluoride electrolytes,
J. Electrochem. Soc.
145
(3), 964, 1998.
951. F. Ozanam, J.-N. Chazalviel, A. Radi, and M. Etman, Resonant and nonresonant behavior of the anodic
dissolution of silicon in fluoride media: An impedance study,
J. Electrochem. Soc.
139
(9), 2491, 1992.
952. R. B. Wehrspohn, J.-N. Chazalviel, and F. Ozanam, macropore formation in highly resistive p-type
crystalline silicon,
J. Electrochem. Soc.
145
(8), 2958, 1998.
953. M. A. Butler and D. S. Ginley, Prediction of flatband potentials at semiconductor-electrolyte inter-
faces from atomic electronegativities,
J. Electrochem. Soc.
125
(2), 228, 1978.
954. D. Vanmeakelbergh and P. C. Searson, On the electrical impedance due to the anodic dissolution of
silicon in HF solutions,
J. Electrochem. Soc.
141
(3), 697, 1994.
955. M. J. Madou, K. W. Freese, Jr., and S. R. Morrison, Photoelectrochemical corrosion as influenced by
an oxide layer,
J. Phys. Chem.
84
, 3423, 1984.
956. K. D. Legg, A. B. Ellis, J. M. Bolts, and M. S. Wrighton, n-type Si-based photoelectrochemical cell:
New liquid junction photocell using a nonaqueous ferricenium/ferrocene electrolyte,
Proc. Natl. Acad.
Sci. USA
74
,
4116, 1977.
957. A. Uhlir, Jr., Electrolytic shaping of germanium and silicon,
Bell Syst. Tech. J.
333
, March 1956.
958. K. Srinivasan and G. A. Rechnitz, Activity measurements with a fluoride-selective membrane elec-
trode,
Anal. Chem.
40
(3), 509, 1968.
959. I. Bergman and M. S. Paterson, Silica powders of respirable size. I. Preliminary studies of dissolution
rates in dilute sodium hydroxide,
J. Appl. Chem.
369
, 1961.
960. B. H. Loo, K. W. Freese, Jr., and S. R. Morrison, The influence of surface oxide films on the stabi-
lization of photoelectrode,
Surf. Sci.
109
, 75, 1981.
961. L. Young and F. G. R. Zobel, An ellipsometric study of steady-state high field ionic conduction in
anodic oxide films on tantalum, niobium and silicon,
J. Electrochem. Soc.
113
, 277, 1966.
962. Y. V. Pleskov and Y. Y. Gurevich,
Semiconductor Photoelectrochemistry,
Consultants Bureau, New
York, 1986.
