Chemistry Reference
In-Depth Information
963. A. J. Bard and L. R. Faulkner, Electrochemical Methods Fundamentals and Applications, John Wiley
& Sons, New York, 1980.
964. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
965. P. C. Searson, D. D. Macdonald and L. M. Peter, Frequency domain analysis of photoprocesses at illu-
minated semiconductor electrodes by transient transformation, J. Electrochem. Soc. 139 , 2538, 1992.
966. P. C. Searson, S. M. Prokes, and O. J. Glembocki, Luminescence at the porous silicon/electrolyte inter-
face, J. Electrochem. Soc. 140 , 3327, 1993.
967. R. T. Potzschke, G. Staikov, W. J. Lorenz, and W. Wiesbeck, Electrochemical nanostructuring of n-
Si(111) single-crystal faces, J . Electrochem. Soc. 146 , 141, 1999.
968. V. Bertagna, R. Erre, F. Rouelle, and M. Chemla, Corrosion rate of n- and p-silicon substrates in HF,
HF + HC1 and aqueous solutions, J. Electrochem. Soc. 146 , 83, 1999.
969. E. S. Kooij, Silicon: Electrochemistry and luminescence, Ph.D. thesis, Universitiet Utrecht, 1997.
970. X. G. Zhang, Corrosion and Electrochemistry of Zinc, Plenum Press, New York, 1996.
971. R. Srinivasan and I.I. Suni, Kinetic analysis ofAu deposition from aqueous HF onto Si(111) by surface
second harmonic generation, J. Electrochem. Soc. 146 , 570, 1999.
972. L. M. Loewenstein, F. Charpin, and P. W. Mertens, Competitive adsorption of metal ions onto
hydrophilic silicon surfaces from aqueous solutions, J. Electrochem. Soc. 146 , 719, 1999.
973. Merck Index, 11th ed., Merck & Co., Rahway, NJ, 1989.
974. CRC Handbook of Chemistry and Physics, 68th ed., CRC Press, Boca Raton, FL, 1988.
975. Y. Mori, K. Uemura, and K. Shimanoe, Adsorption species of transtion metal ions on silicon wafer in
SC-1 solution, J. Electrochem. Soc. 142 , 3104, 1995.
976. L. Mouche, F. Tardif, and J. Derrien, Mechanisms of metallic impurity deposition on silicon substrates
dipped in cleaning solution, J. Electrochem. Soc. 142 , 2395, 1995.
977. L. M. Loewenstein and P. W. Mertens, Adsorption of metal ions onto hydrophilic silicon surfaces from
aqueous solution: Effect of pH, J. Electrochem. Soc. 145 , 2841, 1998.
978. M. Miyamoto, T. Tatsuno, and Y. Ohta, Advanced ultrapure water by HF addition, J . Electrochem.
Soc. 140 , 2546, 1993.
979. J. P. John and J. McDonald, Spray etching of silicon in the
system, J. Electrochem.
Soc. 145 , 2622, 1998.
980. J. A. Kerr, CRC Handbook of Chemistry and Physics, 68th ed., CRC Press, Boca Raton, FL, 1988.
981. E. S. Kooij, K. Butter, and J. J. Kelly, Silicon etching in
solution: Charge balance for the
oxidation reaction, Electrochem. Solid State Lett. 2 , 178, 1999.
982. K. T. Lee and S. Raghvan, Etch rate of silicon and silicon dioxide in ammonia-peroxide solutions
measured by quartz crystal microbalance technique, Electrochem. Solid State Lett. 2 , 172, 1999.
983. S. Chandra and J. Singh, Capacitance-voltage measurement technique as a tool for in situ character-
ization of electrochemical etching of silicon, J. Electrochem. Soc. 146 , 1206, 1999.
984. O. J. Glembocki, E. D. Palik, G. R. de Guel, and D. L. Kendall, Hydration model for the molarity
dependence of the etch rate of Si in aqueous alkali hydroxides, J. Electrochem. Soc.
, 1055, 1991.
985. S. M. Hu and D. R. Kerr, Observation of etching of n-type silicon in aqueous HF solutions, J. Elec-
trochem. Soc. 114 , 414, 1967.
986. S. R. Morrison, F. V. Kerchove, and W. P. Gomes, Hole injection into dislocations in p-silicon elec-
trodes, Ber. Bunsenges. Phys. Chem. 95 , 165, 1991.
987. J. Carstensen, R. Prange, and H. Foll, A model for current voltage oscillations at the silicon electrode
and comparison with experimental results, J. Electrochem. Soc. 146 , 1134, 1999.
988. N. Koshida and K. Echizenya, Characterization studies of p-type porous Si and its photoelectro-
chemical activation, J. Electrochem. Soc. 138 , 837, 1991.
989. G. K. Mayer, H. L. Offereins, H. Sandamaier, and K. Kuhl, Fabrication of non-underetched convex
corners inanisotropic etching of (100)-silicon in aqueous KOH with respect to novel micromechani-
cal elements, J. Electrochem. Soc. 137 , 3947, 1990.
990. G. Osakam, P. M. Vereecken, and P. C. Searson, Electrochemical deposition of copper on n-Si/TiN,
J. Electrochem. Soc. 146 , 1436, 1999.
991. M. Buberto, X. G. Zhang, R. Scarmozzino, A. E. Willner, D. V. Podlesnik, and R. M. Osgood, The
laser-controlled micrometer-scale photoelectrochemical etching of III-V semiconductors, J. Elec-
trochem. Soc. 138 , 1174, 1991.
992. E. Sirtl and A. Adler, Z. Metallk. 52 , 529, 1961.
138
Search WWH ::




Custom Search