Chemistry Reference
In-Depth Information
910. A. A. Blumberg and S. C. Stavrinou, Tabulated functions for heterogeneous reaction rates: The attack
of vitreous silica by hydrofluoric acid,
J. Am. Chem. Soc.
64
, 1438, 1960.
911. J. R. Ligenza, Effect of crystal orientation on oxidation rates of silicon in high pressure steam
65
,
2011, 1961.
912. C. Pavelescu, C. Cobianu, and E. Segal, Etch rate of low-temperature chemically vapor deposited
films in p-etch solution: The effect of deposition conditions,
J. Mater. Sci. Lett.
4
, 1280, 1985.
913. R. Memming, Surface recombination at higher injection levels,
Surf. Sci.
1
,
88, 1964.
914. G. F. Cerofolini, A study of the ionic route for hydrogen terminations resulting after
etching by
concentrated aqueous solutions of HF,
Appl. Surf. Sci.
133
, 108, 1998.
915. H. Ochs, D. Bublak, U. Wild, M. Muhler, and B. O. Kolbesen, Depth distribution of zinc adsorbed
on silicon surfaces out of alkaline aqueous solutions,
Appl. Surf. Sci.
133
, 73, 1998.
916. W. E. Kline and H. S. Fogler, Dissolution kinetics: Catalysis by salts,
J
.
Colloid Interface Sci.
82
(1),
103, 1981.
917. R. Memming, Solar energy conversion by photoelectrochemical processes,
Electrochim. Acta
25
,
77,
1980.
918. K. E. Petersen, Silicon as a mechanical material,
Proc. IEEE
70
(5), 420, 1982.
919. E. F. Duffek, E. A. Benjamini, and C. Mylroie, The anodic oxidation of silicon in ethylene glycol solu-
tions,
Electrochem. Tech.
3
(3-4), 75, 1965.
920. L. M. Peter, D. J. Blackwood, and S. Pons, Photocorrosion of n-Si in ammonium fluoride solutions:
An investigation by in-situ Fourier transform infrared spectroscopy,
J. Electroanal. Chem.
294
, 111,
1990.
921. L. M. Peter, A. M. Borazio, H. J. Lewerenz, and J. Stumper, Photocurrent multiplication during pho-
todissolution of n-Si in NH
4
F. Deconvolution of electron injection steps by intensity modulated
photocurrent spectroscopy,
J
.
Electroanal. Chem.
290
, 229, 1990.
922. L. J. Warren, The measurement of pH in acid fluoride solutions and evidence for the existence of
Anal. Chim. Acta
53
, 199, 1971.
923. H. Gerischer and W. Mindt, The mechanisms of the decomposition of semiconductors by electro-
chemical oxidation and reduction,
Electrochim. Acta
13
, 1329, 1968.
924. J. W. Schultze and K. G. Jung, Regular nanostructured systems formed electrochemically: Deposition
of electroactive polybithiophene into porous silicon,
Electrochim. Acta
40
(10), 1369, 1995.
925. R. M. Hurd and N. Hackerman, Passivity phenomena at the silicon/electrolyte interface,
Electrochim.
Acta
9
, 1633, 1964.
926. B. Gelloz and A. Bsiesy, Carrier transport mechanisms in porous silicon in contact with a liquid phase:
A diffusion process,
Appl. Surf. Sci.
135
, 15, 1998.
927. B. D. Chase and D. B. Holt, Jet polishing of semiconductors. II. Electrochemically formed tunnels in
GaP,
J. Electrochem. Soc.
119
(3), 314, 1972.
928. C. Messmer and J. C. Bilello, The surface energy of Si, GaAs, and GaP,
J. Appl. Phys.
52
(7), 4623,
1981.
929. A. V. Rao, J.-N. Chazalviel, and F. Ozanam, Infrared-reflection spectroscopy,
J. Appl Phys.
60
(2),
696, 1986.
930. L. Bousse, S. Mostarshed, B. V. D. Shoot, N. F. De Rooij, P. Gimmel, and W. Gopel, Zeta potential
measurements of TaO and SiO thin films,
J. Colloid Interface Sci.
147
(1), 22, 1991.
931. P. Allongue, C. H. de Villeneuve, J. Pinson, F. Ozanam, J.-N. Chazalviel, and X. Wallart, Organic
monolayers on Si(111) by electrochemical method,
Electrochim. Acta
43
(19-20), 2791, 1998.
932. J.-N. Chazalviel, Impedance studies at semiconductor electrodes: Classical and more exotic tech-
niques,
Electrochim. Acta
35
(10), 1545, 1990.
933. F. Ozanam, C. da Fonseca, A. V. Rao, and J.-N. Chazalviel, In situ spectroelectrochemical study of
the anodic dissolution of silicon by potential-difference and electromodulated FT-IR spectroscopy,
Appl. Spectrosc.
51
(4), 519, 1997.
934. F. Ozanam and J.-N. Chazalviel, In-situ infrared vibrational study of the early stages of silicon oxi-
dation at the interface with a non-aqueous electrolyte,
J. Electroanal. Chem.
269
, 251, 1989.
935. J.-N. Chazalviel and T. B. Truong, An experimental study of the n-Si/acetonitrile interface: Fermi level
pinning and surface states investigation,
J. Am. Chem. Soc.
103
, 7447, 1981.
936. H. H. Hassan, J.-N. Chazalviel, M. Neumann-Spallart, F. Ozanam, and M. Etman, Chemical limita-
tions to the anodic dissolution of p-Si in fluoride media,
J. Electroanal. Chem.
381
, 211, 1995.
