Biomedical Engineering Reference
In-Depth Information
TABLE 2-1 Predictions of 2001 ITRS for Selected Parameters
Year of Production
Characteristic
2001
2004
2007
2010
2013
2016
Memory
DRAM feature size, 1 2 pitch (nm)
130
90
65
45
32
22
Generation at production
512M
1G
4G
8G
32G
64G
Cost/bit at production (packaged
7.7
2.7
0.96
0.34
0.12
0.042
microcents)
Logic
Minimum feature size (physical
65
37
25
18
13
9
gate length) (nm)
Functions/chip (millions of
276
553
1,106
2,212
4,424
8,848
transistors)
Cost/transistor, high performance,
97
34
12
4.3
1.5
0.54
at production (microcents)
Local clock (MHz)
1,684
3,990
6,739
11,511
19,348
28,751
Power dissipation, high
130
160
190
218
251
288
performance (W)
SOURCE: Adapted from the International Technology Roadmap for Semiconductors, 2001 edition.
Austin, Tex.: International SEMATECH.
carriers becomes significant at 10 nanometers and dominates below 3 nanom-
eters. In addition, at a few nanometers, about 50 percent of all atoms in a particle
are surface atoms, so that electrical properties are no longer determined by solid-
state bulk phenomena.
On the other hand, the same nanoscale phenomena offer the opportunity to
develop whole new classes of devices based on the principles of quantum phys-
ics, which may propel integrated circuits toward and beyond the end of the
current roadmap. FlashRAM, now widely used to store data in digital cameras
and MP3 music players, uses quantum-mechanical tunneling of electrons through
~10-nanometer-thick dielectric layers to charge a memory storage element. The
ITRS (2001) and the European Commission Technology Roadmap for Nano-
electronics (2000) 3 discuss a number of candidates for replacing classical CMOS.
However, it may be that systems based on these new principles function in a
manner significantly different from current computing systems and are more
suited to alternative architectures. There is no established roadmap to the devel-
opment of these technologies, even though one may speculate on their function-
ality. A possible path is illustrated in Figure 2-3.
 
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