Biomedical Engineering Reference
In-Depth Information
Anchor
Sacrificial layer
Substrate
Structural layer
Release etch
FIGuRE 8.22 Cross.section.of.the.surface.micromachining.process.showing.the.gap.between.the.structural.layer.
and.the.substrate.that.is.deined.by.the.sacriicial.layer.ater.the.release.etch..he.thin-ilm.deposition.processing.
that.is.used.in.surface.micromachining.limits.the.sacriicial.layer.to.several.micrometers.in.thickness.
A
+Q
+Q
g 0
z
-Q
z
g 0
-Q
FIGuRE 8.23 Parallel.plate.capacitor.with.an.area. A ,.charge. Q ,.and.an.initial.gap. g 0 ..When.connected.to.a.voltage.
source,.one.plate.acquires.a.negative.charge.( −Q ),.and.the.other.plate.acquires.a.positive.charge.( +Q ),.leading.to.an.
attractive.force.between.the.plates..he.top.plate.moves.in.the. z .direction.and.the.gap.is.decreased.from.its.initial.
value.of. g 0 .
where.the.capacitance.of.a.parallel.plate.capacitor.is.given.by
A
g
A
.
.
C
=
ε
=
ε
(8.6.2.2)
0
0
g
z
0
ε 0 .is.the.dielectric.permittivity.of.free.space.(8.85.×.10 −12 .F/m),. g .is.the.distance.between.the.plates.(m),.
and. A .is.the.area.of.the.plates.(m 2 ).
he.incremental.work.d U .done.in.charging.the.capacitor.by.transferring.an.incremental.charge.d Q .
from.one.plate.to.the.other.through.a.voltage. V .is.given.by
d
U V Q
=
d
(8.6.2.3)
.
.
Substituting.for. V ,
Q Q
C
d
d
U V Q
=
d
=
(8.6.2.4)
.
.
 
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