Biomedical Engineering Reference
In-Depth Information
Anchor
Sacrificial layer
Substrate
Structural layer
Release etch
FIGuRE 8.22
Cross.section.of.the.surface.micromachining.process.showing.the.gap.between.the.structural.layer.
and.the.substrate.that.is.deined.by.the.sacriicial.layer.ater.the.release.etch..he.thin-ilm.deposition.processing.
that.is.used.in.surface.micromachining.limits.the.sacriicial.layer.to.several.micrometers.in.thickness.
A
+Q
+Q
g
0
z
-Q
z
g
0
-Q
FIGuRE 8.23
Parallel.plate.capacitor.with.an.area.
A
,.charge.
Q
,.and.an.initial.gap.
g
0
..When.connected.to.a.voltage.
source,.one.plate.acquires.a.negative.charge.(
−Q
),.and.the.other.plate.acquires.a.positive.charge.(
+Q
),.leading.to.an.
attractive.force.between.the.plates..he.top.plate.moves.in.the.
z
.direction.and.the.gap.is.decreased.from.its.initial.
value.of.
g
0
.
where.the.capacitance.of.a.parallel.plate.capacitor.is.given.by
A
g
A
.
.
C
=
ε
=
ε
(8.6.2.2)
0
0
g
−
z
0
ε
0
.is.the.dielectric.permittivity.of.free.space.(8.85.×.10
−12
.F/m),.
g
.is.the.distance.between.the.plates.(m),.
and.
A
.is.the.area.of.the.plates.(m
2
).
he.incremental.work.d
U
.done.in.charging.the.capacitor.by.transferring.an.incremental.charge.d
Q
.
from.one.plate.to.the.other.through.a.voltage.
V
.is.given.by
d
U V Q
=
d
(8.6.2.3)
.
.
Substituting.for.
V
,
Q Q
C
d
d
U V Q
=
d
=
(8.6.2.4)
.
.