Electro-Optics - Applied Optics Fundamentals and Device Applications - page 96

63. Hutcheson and Mentzer. Design criteria for AlGaAs/GaAs. Lecture Cambridge,
1983.
64. Hutcheson, Haugen, and Husain. 1987. Optical interconnects replace hardware.
J. IEEE Spectrum . 24(3):30-35.
Hartman, D.H., M. K. Grace, and F. V. Richard. 1986. An effective lateral fiber-
optic electronic coupling and packaging technique suitable for VHSIC appli-
cations. J. Lightwave Technol . LT-4:73.
65. Hutcheson, L. D. 1986. GaAs/AlGaAs Monolithic optoelectronics and inte-
grated optics. Technical Digest of Conference on Lasers and Electro-Optics , June
9-13, in San Francisco, CA.
66. Hutcheson and Mentzer. Design criteria for AlGaAs/GaAs. SPIE .
67. Ury, I., S. Margalit, M. M. Yust, and A. Yariv. 1979. Monolithic integration of an
injection laser and a metal semiconductor field effect transistor. Appl. Phys. Lett .
34:430.
Fukuzawa, T., N. Nakamura, M. Hiras, T. Kuroda, and J. Umeda. 1979.
Monolithic integration of a GaAlAs injection laser with a Schottky gate field
effect transistor. Appl. Phys. Lett . 36:181.
Katz, J., N. Bar-Chaim, P. C. Chen et al. 1980. A monolithic integration of GaAs/
AlGaAs bipolar transistor and heterostructure laser. Appl. Phys. Lett . 37:211.
Ury, K. Lau, N. Bar-Chaim, and A. Yariv. 1982. Very high frequency GaAlAs
laser field-effect transistor monolithic integrated circuit. Appl. Phys. Lett .
41:126.
Kim, M., C. Hong, D. Kasemset, and R. Milano. 1983. GaAlAs/GaAs integrated
optoelectronic transmitter using selective MOCVD epitaxy and planar ion implan-
tation. Proceedings of the IEEE GaAs IC Symposium , October, in Monterey, CA.
68. Carney, J., M. Helix, R. Kolbas, S. Jamison, and S. Ray. 1983. Integrated optoelec-
tronic transmitter. Proc. SPIE 408, April.
Kolbas, R., J. Carney, J. Abrokwak, E. Kalweit, and M. Hitchell. 1982. Planar
optical sources and detectors for monolithic integration with GaAs Metal
semiconductor field-effect transistor (MESFET) electronics. Proc. SPIE 321,
January.
Carney, J. K., M. J. Helix, R. M. Kolbas, S. A. Jamison, and S. Ray. 1982. Monolithic
optoelectronic/electronic circuits. Proceedings of the IEEE GaAs IC Symposium ,
October.
Kim, M. E.,C. S. Hong, D. Kasemset, and R. A. Milano. 1984. GaAlAs/GaAs
integrated optoelectronic transmitter. IEEE EDL.10.1109:306-309.
Kilcoyne, M. K., D. Kasemset, R. Asatourian, and S. Beccue. 1986. Optical data
transmission between high speed digital integrated circuit chips. Proc. SPIE
625:127.
69. Carney, H., R. Kolbas, S. Jamison, and S. Ray. 1983. Integrated optoelectronic
transmitter. Proc. SPIE . 408.
70. Blauvelt, H., N. Bar-Chaim, D. Fekete, S. Margalit, and A. Yariv. 1982. AlGaAs
lasers with micro-cleaved mirrors suitable for monolithic integration. Appl.
Phys. Lett . 40:2891.
71. Carney, J., M. Helix, and R. M. Kolbas. 1983. Gigabit optoelectronic transmitter.
Proceedings of the IEEE GaAs IC Symposium , October.
72. Walton, M. P., P. R. Haugen, and S. L. Palmquist. 1986. A 1 Gbit/s optical/
electrical input monolithic GaAs transmitter IC. Proceedings of the IEEE MTT-S
International Microwave Symposium , June, in Baltimore, MD.