Biomedical Engineering Reference
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REFERENCES
1. Raizer, Y.P., Shneider, M.N., and Yatsenko, N.A., Radio-Frequency Capacitive Discharges , CRC Press,
Boca Raton, FL, 1995.
2. Park, S.G. et al., Large area high density plasma source by helical resonator arrays , Surf. Coating Tech. ,
133-134, 598, 2000.
3. Miyake, S. et al., Development of high-density RF plasma and application to PVD, Surf. Coating Tech. ,
171, 131, 2000.
4. Lieberman, M.A. and Lichtenberg, A.J., Principles of Plasma Discharges and Materials Processing ,
Wiley, New York, 1994.
5. Ehlers, K.W. and. Leung, K.N., Some characteristics of tungsten fi laments operated as cathodes in a gas
discharge, Rev. Sci. Instrum. , 50, 356, 1979.
6. Brown, S.C., Basic data of plasma physics, the fundamental data on electrical discharges in gases, Basic
Data on Electrical Discharges in Gases , American Institute of Physics, New York, 1993.
7. Lafferty, J.M., Vacuum Arcs—Theory and Applications , Wiley, New York, 1980.
8. Boxman, R.L., Sanders, D.M., and Martin, P.J., Handbook of Vacuum Arc Science and Technology ,
Noyes, Park Ridge, NJ, 1995.
9. Schulke, T., Anders, A., and Siemroth, P., Macroparticle fi ltering of high-current vacuum arc plasmas,
IEEE Trans. Plasma Sci. , 25, 660, 1997.
10. Steinbruchel, C.H., Langmuir probe measurements on CHF 3 and CF 4 plasmas-the role of ions in the
reactive sputter etching of SiO 2 and Si. J. Electrochem. Soc ., 130, 648, 1983.
11. Anders, A., Handbook of Plasma Immersion Ion Implantation and Deposition , John Wiley & Sons,
Inc., Hoboken, NJ, 2, 2000.
12. Biersack, J.P. and Haggmark, L.G., A Monte Carlo computer program for the transport of energetic ions
in amorphous targets, Nucl. Instrum. Meth. , 174, 257, 1980.
13. Rimini, E., Ion Implantation: Basics to Device Fabrication , Kluwer Academic, Boston, MA, 1995.
14. Mayer, J.W., Eriksson, L., and Davies, J.A., Ion Implantation in Semiconductors , Academic Press,
New York, 1970.
15. Nastasi, M., Mayer, J.W., and Hirvonen, J.K., Ion-Solid Interactions: Fundamentals and Applications ,
Cambridge University Press, Cambridge, MA, 1996.
16. Adda, Y., Beyeler, M., and Brebec, G., Radiation effects on solid state diffusion, Thin Solid Film , 25,
107, 1975.
17. Borg, R.J. and Dienes, G.J., An Introduction to Solid State Diffusion , Academic Press, Boston, MA, 1988.
18. Thompson, M.W., Defects and Radiation Damage in Metals , Cambridge University Press, Cambridge,
MA, 1969.
19. Auciello, O. and Kelly R., Ion Bombardment Modifi cation of Surfaces , Elsevier, Amsterdam, 1984.
20. Andersen, H.H. and Bay, H.L., Sputtering yield measurements, in Sputtering by Particle Bombardment
I: Physical Sputtering of Single Element Solids , Topics Appl. Phys. Behrisch, R., Ed., Vol. 47, Springer-
Verlag, New York, 1981, 145.
21. Townsend, P.D., Kelly, J.C., and Hartley, N.E.W., Ion Implantation, Sputtering and Their Applications ,
Academic Press, New York, 1976.
22. Bunshah, R.F., Handbook of Deposition Technologies for Films and Coatings: Science, Technology,
and Applications , Noyes Publications, Park Ridge, NJ, 1994.
23. Mattox, D.M., Particle bombardment effects on thin-fi lm deposition: a review, J. Vac. Sci. Tech. A , 7,
1105, 1989.
24. Ensinger, W., Ion sources for ion beam assisted thin-fi lm deposition, Rev. Sci. Instrum. , 63, 5217, 1992.
25. Ziegler, J.F., Handbook of Ion Implantation Technology , Elsevier Science Publishers, Amsterdam,
North-Holland, 1992.
26. Smidt, F.A. and Sartwell, B.D., Nucl. Instrum. Meth., B6, 70, 1985.
27. Grabowski, K.S. et al., Retention of ions implanted at non-normal incidence, in Ion Implantation and
Ion Beam Processing of Materials , Hubler, G.K., Ed., Elsevier, New York, 1984, 615.
28. Chu, P.K. et al., Plasma immersion ion implantation—a fl edgling technique for semiconductor process-
ing, Mat. Sci. Eng. R., R17, 207, 1996.
29. Min, J. et al., Buried oxide formation by plasma immersion ion implantation, Mater. Chem. Phys . , 40,
219, 1995.
30. Liu, J.B. et al., Formation of buried oxide in silicon using separation by plasma implantation of oxygen,
Appl. Phys. Lett. , 67, 2361, 1995.
 
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