MOLECULAR COMPUTING: INTEGRATION OF MOLECULES FOR NANOCOMPUTING - Bio-Inspired and Nanoscale Integrated Computing - page 326

87. P. Zhang, et al. Electronic transport in nanometre-scale silicon-on-insulator mem-
branes. Nature, 439(7077): p 703, 2006.
88. J. Yang, et al. Controlling the threshold voltage of a metal-oxide-semiconductor field
effect transistor by molecular protonation of the Si:SiO[sub 2] interface. Journal of
Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20: pp
1706-1709, 2002.
89. J. J. Boland. Semiconductor physics: transport news. Nature, 439(7077): p 671, 2006.
90. T. Shinada, et al. Enhancing semiconductor device performance using ordered dopant
arrays. Nature, 437(7062): p 1128, 2005.
91. S. Roy and A. Asenov. Applied physics: Where do the dopants go? Science, 309(5733):
pp 388-390, 2005.
92. T. Sugii, et al. Doping process issues for sub-0.1 m m Generation MOSFETs. In:
Materials Research Society Symposium Proceedings, Warrendale, Pennsylvania,
2001; Materials Research Society; 1999.
93. Z. Liu, et al. Molecular memories that survive silicon device processing and real-world
operation. Science, 302(5650): pp 1543-1545, 2003.
94. R. J. Hamers, et al. Cycloaddition chemistry of organic molecules with semiconductor
surfaces. Accounts of Chemical Research, 33(9): pp 617-624, 2000.
95. J. M. Buriak. Organometallic chemistry on silicon and germanium surfaces. Chemical
Reviews, 102(5): pp 1271-1308, 2002.
96. M. A. Brook. Silicon in Organic, Organometallic, and Polymer Chemistry. New York:
Wiley, 2000.
97. K. Terada and S. Okamoto. Zero-point correction of the carrier density in the measure-
ment of MOS inversion-layer mobility. Solid-State Electronics, 47(9): p 1457, 2003.
98. D. K Schroder. Semiconductor Material and Device Characterization. New York:
Wiley, 1990.
99. A. Ortiz-Conde, et al. A review of recent MOSFET threshold voltage extraction
methods. Microelectronics Reliability, 42: p 583, 2002.
100. J. Y. Yu, S. W. Chung, and J. R. Heath. Silicon nanowires: preparation, device
fabrication, and transport properties. Journal of Physical Chemistry B, 104(50):
pp 11864-11870, 2000.
101. J. Goldberger, et al. Silicon vertically integrated nanowire field effect transistors. Nano
Letters, 6(5): pp 973-977, 2006.
102. M. M. Ziegler and M. R. Stan. CMOS/nano co-design for crossbar-based molecular
electronic systems. IEEE Transactions on Nanotechnology, 2(4): pp 217-230, 2003.
103. K. K. Likharev and D. B. Strukov. CMOL: Devices, circuits, and architectures.
Introducing Molecular Electronics, pp 447-477, 2005.
104. Y. Cui, et al. Doping and electrical transport in silicon nanowires. Journal of Physical
Chemistry B, 104(22): pp 5213-5216, 2000.
105. K. Byon, et al. Synthesis and postgrowth doping of silicon nanowires. Applied Physics
Letters, 87(19): p 193104, 2005.
106. M. V. Fernandez-Serra, C. Adessi, and X. Blase. Surface segregation and back-
scattering in doped silicon nanowires. Physical Review Letters, 96(16): p 166805, 2006.