Chemistry Reference
In-Depth Information
Table 9.4 Synthetic conductions of [Ni
2
(RCS
2
)
4
I]
1
(R
¼
Me (7), Et (8),
n
-Pr (9), and
n
-Bu (10))
Compound
Precursor complex/mg (mmol)
Iodine/mg (mmol) Solvent/mL
Yield/mg (%) Temperature References
[Ni
2
(MeCS
2
)
4
I]
1
(7)
a
[Ni
2
(MeCS
2
)
4
]/484 (1.00)
126 (0.5)
CS
2
/100
þ
30
-
r.t.
[
37
]
[Ni
2
(EtCS
2
)
4
I]
1
(8)
b
[Ni
2
(EtCS
2
)
4
]/608 (1.13)
110 (0.433)
n
-hexane-CS
2
(1:1)/110
54 mg 7 %
5-6
C
[
38
]
[Ni
2
(
n
-PrCS
2
)
4
I]
1
(9)
b
[Ni
2
(
n
-PrCS
2
)
4
]/1.002 (1.686)
192 (0.756)
n
-hexane-benzene (1:1)/105
40 mg 3 %
r.t.
[
38
]
[Ni
2
(
n
-BuCS
2
)
4
I]
1
(10)
b
[Ni
2
(
n
-BuCS
2
)
4
]/495 (0.761)
50 (0.20)
n
-hexane-CS
2
(8:1)/30
23 mg 4 %
r.t.
[
38
]
a
Suitable crystals for X-ray investigations were obtained by diffusion technique.
b
This compound was prepared by the vapor diffusion of iodine into a solution containing precursor complex [Ni
2
(RCS
2
)
4
].
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