Biomedical Engineering Reference
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9.2 Concentration Profiles and Interface Analysis
Interface analysis requires a vertical orientation to the interface, i.e., one that is par-
allel to the incident electron beam, in order to analyze only the plane of the interface
viewed in image mode. Figure
4.14
shows a bright-field TEM image of interfaces
between SiO
2
/Ti/Pt/PZT layers deposited on a Si substrate and the concentration
profile where the sequence of the multilayer material is found.
a
b
c
Fig. 4.14
(
a
) Bright-field image of the interface in a multilayer material, SiO
2
/Ti/Pt/PbZrTiO
3
on a Si substrate, (
b
) point EDS chemical analysis in PbZrTiO
3
film, and (
c
) EDS concentration
profile across a full interface of PbZrTiO
3
/substrate (
J. Ayache, Lawrence Berkeley Laboratory,
NCEM, Berkeley, CA, USA
)
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