The Different Observation Modes in Electron Microscopy (SEM, TEM, STEM) - Sample Preparation Topic for Transmission Electron Microscopy - page 53

Table 3.2 Characteristics of responses to the electron-matter interaction, information on the image obtained and the means used, as well as the spatial
resolution of the images

Emission Energy Characteristics Image information Means Spatial resolution

Secondary electrons <50 eV Emitted by the surface

<50 nm

Morphology-Topography of
the sample surface

SEM TEM/STEM 1-5 nm

f ( Z 3 ) Backscattered

electrons

Energy Output = Z -contrast images SEM

100 keV to few
hundred eV

5< D < 200 nm Supplement to microanalysis TEM/STEM < 10 nm

Auger electrons Intermediate < 2 keV Emission from first

atomic layers

Chemical analysis of the
surface

SEM 1 µ m

Information on the
crystallographic
structure

Morphology-microtexture
defects diffraction

TEM 0.07-0.2 nm

Transmitted
electrons

E 0 - E Chemical analysis TEM/STEM Minimal area

analyzed 0.5 nm

Electronic structure Chemical bond and chemical

environment

STEM
EELS

<0.5 nm

Quantitative SEM 1 µ m

X photons Few keV Information on the

nature of the elements

Elemental analysis of the target TEM/STEM Minimal area 0.5 nm

Cathodo-
luminescence UV,
IR, and visible

Few keV Electron-hole pair

recombination

Highlighting impurities and
defects

SEM 1 µ m