References - Electrochemistry of Silicon and Its Oxide - page 498

1178. J. Grzanna, H. Jungblut, and H.-J. Lewerenz, A model for electrochemical oscillations at the Si/
electrolyte contact, part I. Theoretical development, J . Electroanal. Chem. 486 , 181, 2000.
1179. I. Frature, S. Cattarin, M. Musiani, and B. Tribollet, Electrodissolution of Ti and p-Si in acidic
fluoride media: Formation ratio of oxide layers from electrochemical impedance spectroscopy, J. Elec-
troanal. Chem. 482 , 202, 2000.
1180. S. Cattarin, L. Frateur, M. Musiani, and B. Tribollet, Electrodissolution of p-Si in acidic fluoride media:
Modeling of the steady state, J. Electrochem. Soc. 147 , 3277, 2000.
1181. X. H. Xia, C. M. A. Ashruf, P. J. French, and J. J. Kelly, Galvanic cell formation in silicon/metal con-
tacts: The effect on silicon surface morphology, Chem. Mater. 12 , 1671, 2000.
1182. Z. Sardar and I. Abrams, Introducing Chaos, Totem Books, New York, 1999.
1183. R. J. Forster, Hopping Across Interfaces: Heterogeneous Electron Transfer Dynamics, Interface 9 (4)
24, 2000.
1184. B. C. Crandall, Nanotechnology, B. C. Crandell (ed.), The MIT Press, Cambridge, 1999.
1185. X. G. Zhang, “Surface Curvature and Passivation Breakdown”, in the proceedings of the Passivity
symposium, B. Ives, J. L. Luo, and Sumoki (eds.), Jasper, Canada, The Electrochemical Society, 2001.
1186. S. Langa, I. M. Tiginyanu, J. Carstensen, M. Christopherson, and H. Foll, Formation of Porous Layers
with Different Morphologies during Anodic Etching of n-InP, Electrochemical and Solid State Letters
3 (11), 514, 2000.
1187. M. Jacoly, Semiconductors Meet Organics, Chemical & Engineering News, 32, April, 2000.
1188. R. Dagani, Building From the Bottom Up, Chemical & Engineering News, 27, October, 2000.
1189. R. F. Service, Neurons and Silicon Intimate, Science 284 , 578, 23 April, 1999.
1190. C. Bruckner-Lea, G. K. Celler, R. G. Kelly, J. Lessard, R. D. McConnell, K. Niki, and K. Rajeshwar,
Technology in the Next Century, Interface 9 , 20, Spring, 2000.
1191. R. Dagani, NanoSpace 2000: Melding Two Worlds, Chemical & Engineering News, 39, February,
2000.
1192. S. W. Lim, R. T. Mo, P. A. Pianetta, and C. E. D. Chidsey, Effect of Silicon Surface Termination on
Copper Deposition in Deionized Water, J. Electrochem. Soc. 148, C16, 2001.
1193. M. V. t. Kortenaar, J. M. de Goeij, Z. I. Kolar, G. Frens, P. J. Lusse, M. R. Zuiddam, and E. van der
Drift, Electroless Silver Deposition in 100nm Silicon Structures, J. Electrochem. Soc. 148 , C28, 2001.
1194. Z. Chen, S. M. Lee, and R. K. Singh, Increased Copper Outplating from Dilute HF Solutions on
Microstructurally Modified Silicon Surfaces, J. Electrochem. Soc. 147 , 3889, 2000.
1195. E. K. Wilson, Quantum Computers, Chemical & Engineering News, 35, November, 2000.