Chemistry Reference
In-Depth Information
1152. M. L. W. van der Zwan, J. A. Bardwell, G. I. Sproule, and M. J. Craham, Mechanism of the growth
of native oxide on hydrogen passivated silicon surfaces,
Appl. Phys. Lett.
64
, 446, 1994.
1153. X. G. Zhang, unpublished.
1154. H. Gerischer, The role of semiconductor structure and surface properties in photoelectrochemical
processes,
J. Electroanal. Chem.
150
, 553, 1983.
1155. H. Kita, Periodic variation of exchange current density of hydrogen electrode reaction with atomic
number and reaction mechanism,
J
.
Electrochem. Soc.
113
, 1095, 1966.
1156. J. Li, S. Cai, and S. Zhang, Constant and steplike behavior of the cross-section dimension of Si
quantum wires and quantum confinement effect in porous silicon formation,
Chin. Sci. Bull.
41
(24),
2060, 1996.
1157. R. Wang, J. Li, Y. Chen, M. Tang, Y. Wang, S. Cai, and Z. Liu, Quantum confinement effect in elec-
troluminescent porous silicon,
Sci. China
41
(4), 337, 1998.
1158. S. Ottow, G. S. Popkirov, and H. Föll, Determination of flat-band potentials of silicon electrodes in
HF by means of AC resistance measurements,
J
.
Electroanal. Chem.
455
, 29, 1998.
1159. S.-L. Zhang, K.-S. Ho, Y. Hou, B. Qian, P. Diao, and S. Cai, The steplike behavior of photolumines-
cence peak energy and formation of p-type porous silicon,
Appl. Phys. Lett.
62
(6), 1, 1993.
1160. R. Q. Wang, J. J. Li, S. M. Cai, Z. F. Liu, and S. L. Zhang, Two-peak electroluminescence of porous
silicon in persulphate solution,
Appl. Phys. Lett.
72
(8), 924, 1998.
1161. P. Schmuki, D. J. Lockwood, H. Isaacs, and A. Bsiesy, Proceedings of the International Symposium
on Pits and Pores: Formation, properties, and significance for advanced luminescent materials,
Elec-
trochem. Soc. Pro.
97
(7), 26, 1997.
1162. V. Lehmann, A. Luigart, and V. Corbel, On the morphology and the electrochemical formation
mechanism of mesoporous silicon,
Electrochem. Soc. Proc.
97
(7), 132, 1997.
1163. S. La Monica, P. Jaguiro, and A. Ferrari, A thermodynamical explanation for pore growing stability
in porous silicon,
Electrochem. Soc. Proc.
97
(7), 140, 1997.
1164. T. Dubois, F. Ozanam, and J.-N. Chazalviel, Stabilization of the porous silicon surface by grafting of
organic groups: Direct electrochemical methylation,
Electrochem. Soc. Proc.
97(
7), 296, 1997.
1165. E. A. Ponomarev and C. Levy-Clement, Macroporous layer formation during electrochemical oxida-
tion of p-Si in non-aqueous solutions,
Electrochem. Soc. Proc.
97
(7), 319, 1997.
1166. T. Akermark, Molecular or atomic oxygen as the transported species in oxidation of silicon,
J. Elec-
trochem. Soc.
147
(5), 1882, 2000.
1167. P. M. Hoffmann, A. Radisic, and P. C. Searson, Growth kinetics for copper deposition on Si(100) from
pyrophosphate solution,
J. Electrochem. Soc.
147
(7), 2576, 2000.
1168. K. Kondo, A. Shigishi, and Z. Tanaka, Electrodeposition of
composite,
J. Electrochem. Soc.
147
(7), 2611, 2000.
1169. J. E. A. M. v a n den Meerakker, R. J. G. Elfrink, F. Roozeboom, and J. F. C. M. Verhoeven, Etching
of deep macropores in 6 in. Si wafers,
J. Electrochem. Soc.
147
(7), 2757, 2000.
1170. P. Jaguiro, S. La Monica, S. Lazarouk, and A. Ferrari, Theoretical model of porous silicon formation,
Electrochem. Soc. Proc.
97
(7), 296, 1997.
1171. P. M. Hoffmann, I. E. Vermeir, and P. Searson, Electrochemical etching of n-type silicon in fluoride
solutions,
J. Electrochem. Soc.
147
, 2999, 2000.
1172. A. Speigel, L. E. Erickson, and P. Schmuki, Selective growth of porous silicon on focused ion beam
patterns,
J
.
Electrochem. Soc.
147
, 2993, 2000.
1173. R. Chmolke, G. Puppe, and H. Piontek, Characterization of silicon wafer back sides with thermal
oxide layers by copper deposition,
J. Electrochem. Soc.
147
, 2999, 2000.
1174. R. Boukherroub, S. Morin, P. Sharpe, D. M. Wayner, and P. Allongue, Insights into the formation
mechanisms of Si-OR monolayers from the thermal reactions of alcohols and aldehydes with Si(111 )-
H,
Langmuir
16
, 7429, 2000.
1175. J. E. Bateman, R. D. Eagling, B. R. Horrocks, and A. Houlton, A deuterium labeling, FTIR, and ab
initio investigation of the solution-phase thermal reactions of alcohols and alkenes with hydrogen-
terminated silicon surfaces,
J. Phys. Chem. B
104
, 5557, 2000.
1176. C. Spinella and G. D'Arrigo, Electrochemical etching of silicon: A powerful tool for delineating junc-
tion profiles in silicon devices by transmission electron microscopy,
J. Vac. Sci. Technol. B
18
, 576, 2000.
1177. J. Grzanna, H. Jungblut, and H.-J. Lewerenz, A model for electrochemical oscillations at the Si/
electrolyte contact, part II. Simulations and experimental results,
J. Electroanal. Chem.
486
, 190, 2000.
