Chemistry Reference
In-Depth Information
657. D. Schmidt, H. Niimi, B. J. Hinds, D. E. Aspnes, and G. Lucovsky, New approach to preparing smooth
Si(100) surfaces: Characterization by spectroellipsometry and validation of interface proper-
ties in metal-oxide-semiconductor devices,
J. Vac. Sci. Technol.
B14
(4), 2812, 1996.
658. L. A. Jones, O. Yukseker, and D. F. Thomas, Dependence of photochemically etched porous silicon
formation on photoetching wavelength and power,
J. Vac. Sci. Technol.
A14
(3), 1505, 1996.
659. H. Sugimura and N. Nakagiri, Scanning probe anodization: Patterning of hydrogen-terminated silicon
surfaces for the nanofabrication of gold structures by electroless plating,
J. Vac. Sci. Technol.
B13
(5),
1933, 1995.
660. L. A. Nagahara, T. Ohmori, K. Hashimoto, and A. Fujishima, Effects of HF solution in the electro-
less deposition process on silicon surfaces,
J. Vac. Sci. Technol.
A11
, 763, 1993.
661. C. R. Helms and B. E. Deal, Mechanisms of the
vapor phase etching of
J
.
Vac. Sci.
Technol.
A10
(4), 806, 1992.
662. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, Infrared spectroscopy of Si(111)
and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology,
J. Vac. Sci.
Technol.
A7
, 2107, 1988.
663. D. Graf, M. Grundner, and R. Chulz, Reaction of water with hydrofluoric acid treated silicon(111) and
(100) surfaces,
J. Vac. Sci. Technol.
A7
(3), 808, 1989.
664. R. T. Howe, Surface micromachining for microsensors and microactuators,
J. Vac. Sci. Technol.
B6
(6),
1809, 1988.
665. B. F. Philips, D. C. Burkman, W. R. Schmidt, and C. A. Peterson, The impact of surface analysis tech-
nology on the development of semiconductor wafer cleaning processes,
J. Vac. Sci. Technol.
A1
(2),
646, 1983.
666. Y. Nakato and H. Tsubomura, Structures and functions of thin metal layers on semiconductor elec-
trodes,
J. Photochem.
29
, 257, 1985.
667. S. B. Felch and J. S. Sonico, A wet etch for polysilicon with high selectivity to photoresist,
Solid State
Technol.
47, September 1986.
668. J. A. Amick, Cleanliness and the cleaning of silicon wafers,
Solid State Technol.
33, November 1976.
669. D. Tolliver, LSI wafer cleaning techniques,
Solid State Technol.
33, November 1975.
670. C. R. Tellier, Some results on chemical etching of AT-cut quartz wafers in ammonium bifluoride solu-
tions,
J
.
Mater. Sci.
17
, 1348, 1982.
671. J. K. Vondeling, Fluoride-based etchants for quartz,
J. Mater. Sci.
18
, 304, 1983.
672. C. R. Tellier and A. Brahim-Bounab, Anisotropic etching of silicon crystals in KOH solution—Part I.
Experimental etched shapes and determination of the dissolution slowness surface,
J. Mater. Sci.
29
,
5953, 1994.
673. C. R. Tellier and A. Brahim-Bounab, Anisotropic etching of silicon crystals in KOH solution—Part
II. Theoretical two-dimensional etched shapes: Discussion of the adequation of the dissolution slow-
ness surface,
J. Mater. Sci.
29
, 6354, 1994.
674. G. Mende, J. Finster, D. Flamm, and D. Schulze, Oxidation of etched silicon in air at Room temper-
ature: Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation
analysis,
Surf. Sci.
128
, p. 169, 1983.
675. H. Kobayashi, J. Ono, T. Ishida, M. Okamoto, H. Kawanaka, and H. Tsubomura, Mechanism of pho-
tocurrent and photovoltage in solar cells using n-silicon electrodes in non-aqueous solutions,
J. Elec-
troanal. Chem.
312
, 57, 1991.
676. J. Stumper, R. Greef, and L. M. Peter, Current oscillations during anodic dissolution of p-Si in ammo-
nium fluoride: An investigation using ring disc voltammetry and ellipsometry,
J. Electroanal. Chem.
310
, 445, 1991.
677. S. Yamamura and H. Kojima, The photovoltaic effect of an insulating polymer-hybridized p-Si solar
cell,
J. Electroanal. Chem.
241
, 379, 1988.
678. R. Keita and L. Nadjo, Electrochemistry and photoelectrochemistry of sodium 9,10-anthraquinone-
2,6-disulfonate in aqueous media, application to rechargeable solar cells and to the synthesis of hydro-
gen peroxide,
J. Electroanal. Chem.
163
, 171, 1984.
679. R. E. Malpas and B. Rushby, The stability of two-layer ferrocene/polypyrrole-coated n-Si electrodes
in aqueous photoelectrochemical photovoltaic cells,
J
.
Electroanal. Chem.
157
, 387, 1983.
680. Y. Nakato, H. Yano, S. Nishiura, T. Ueda, and H. Tsubomura, Hydrogen photoevolution at p-type
silicon electrodes coated with discontinuous metal layers,
J. Electroanal Chem.
228
, 97, 1987.
