Chemistry Reference
In-Depth Information
631. R. Takizawa, T. Nakanishi, K. Honda, and A. Ohsawa, Ultraclean technique for silicon wafer surfaces
with systems, Jpn. J. Appl Phys. L2210, 1988.
632. J. Haisma, G. A. C. M. Spierings, U. K. P. Biermann, and J. A. Pals, Silicon-on-insulator wafer
bonding-wafer thinning technological evaluations, Jpn. J. Appl. Phys. 1426, 1989.
633. N. Koshida, H. Koyama, and Y. Kiuchi, Photoelectrochemical behavior of n-type porous-Si electrodes,
Jpn. J. Appl. Phys. 25 , 1069, 1986.
634. T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki, and M. Hirose, Chemical stability of HF-treated Si(111)
surface, Jpn. J. Appl. Phys. 29 , 3567, 1991.
635. S. Watanabe, M. Shigeno, N. Nakayama, and T. Ito, Silicon-monohydride termination of silicon-111
surface formed by boiling water, Jpn. J. Appl. Phys. 29 , 3575, 1991.
636. O. Vatel, S. Verhaverbeke, H. Bender, M. Caymax, F. Chollet, B. Vermerire, P. Mertens, E. Andre,
and M. Heyns, Atomic force microscopy and infrared spectroscopy studies of hydrogen baked Si
surfaces, Jpn. J. Appl. Phys. 32 , L1489, 1993.
637. H. Morisake, H. Ono, H. Dohkoshi, K. Yazawa, A. Hiraki, M. Iwami, and T. Imura, Auger and X-ray
analyses of iron-oxide-coated Si photoelectrodes, Jpn. J. Appl. Phys. 20 , 777, 1981.
638. N. Koshida and Y. Kiuchi, Observation of a long-life photoelectrochemical conversion with n-type
porous-Si photoelectrodes, Jpn. J. Appl. Phys. 24 , 466, 1985.
639. Y. Kato, T. Ito, and A. Hiraki, Initial oxidation process of anodized porous silicon with hydrogen atoms
chemisorbed on the inner surface, Jpn. J. Appl. Phys. 27 , L1406, 1988.
640. N. Noguchi, I. Suemune, M. Yamanishi, G. C. Hua, and N. Otsuka, Study of luminescent region in
anodized porous silicons by photoluminescence imaging and their microstructures, Jpn. J. Appl. Phys.
31 , L490, 1992.
641. K. Sawara, T. Yasaka, S. Miyazaki, and M. Hirose, Atomic scale flatness of chemically cleaned silicon
surfaces studied by infrared attenuated-total-reflection spectroscopy, Jpn. J. Appl. Phys. 31 , L931,
1992.
642. Y. Fujiwara, H. Nishitani, H. Nakata, and T. Ohyama, Structured photoluminescence spectrum in
laterally anodized porous silicon, Jpn. J. Appl. Phys. 31 , L1763, 1992.
643. T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano, and Y. Kuwano, Improvement of n-type poly-Si film
properties by solid phase crystallization method, Jpn. J. Appl. Phys. 32 , 3720, 1993.
644. T. Unagami, Oxidation of porous silicon and properties of its oxide film, Jpn. J. Appl. Phys. 19 , 231,
1980.
645. C. E. Krohn and J. C. Thompson, Photo-assisted electron injection at a
Chem. Phys. Lett. 65 (1), 132, 1979.
646. D. Laser and A. J. Bard, Semiconductor electrodes photo-induced electrogenerated chemilumines-
cence and up-conversion at semiconductor electrodes, Chem. Phys. Lett. 34 (3), 605, 1975.
647. H. Sugiyama and O. Nittono, Microstructure and lattice distortion of anodized porous silicon layers,
interface,
J . Cryst. Growth 103 , 156, 1990.
648. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Unusually low surface-
recombination velocity on silicon and germanium surfaces, Phys. Rev. Lett. 57 , 249, 1986.
649. K. Barla, G. Bomchil, R. Herino, and J. C. Pfister, X-ray topographic characterization of porous silicon
layers, J. Cryst. Growth 68 , 721, 1984.
650. K. Barla, R. Herino, G. Bomchil, and J. C. Pfister, Determination of lattice parameter and elastic prop-
erties of porous silicon by X-ray diffraction, J. Cryst. Growth 68 , 727, 1984.
651. Y. Arita, Formation and oxidation of porous silicon by anodic reaction, J. Cryst. Growth 45 , 383,
1978.
652. R. W. Series, K. G. Barraclough, and W. Bardsley, Quantitative determination of microdefect density
in dislocation-free silicon by preferential chemical etching, J. Cryst. Growth 49 , 363, 1980.
653. M. Hao, H. Uchida, C. Shao, T. Soga, T. Jimbo, and M. Umeno, Porous GaAs formed by a two-step
anodization process, J. Cryst. Growth 179 , 661, 1997.
654. E. Basaran, C. P. Parry, R. A. Kubiak, T. E. Whall, and E. H. C. Parker, Electrochemical capaci-
tance-voltage depth profiling of heavily boron-doped silicon, J. Cryst. Growth 157 , 109, 1995.
655. D. Nicolaescu, V. Filip, and F. Okuyama, Proposal for a new self-focusing configuration involving
porous silicon for field emission flat panel displays, J. Vac. Sci. Technol. A15 (4), 2369, 1997.
656. A. Pasquarello, M. S. Hybertsen, and R. Car, First-principles study of Si 2p core-level shifts at water
and hydrogen covered Si(001)2 × 1 surfaces, J. Vac. Sci. Technol. B14 (4), 2809, 1996.
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