Chemistry Reference
In-Depth Information
394. W. Haas, Silicon dioxide as dielectric in solid electrolyte capacitors,
J
.
Electrochem. Soc.
109
, 109,
1962.
395. A. V. Rao and J. N. Chazalviel, Chemical trends in the electromodulated infrared vibrational spec-
troscopy of various silicon/electrolyte interfaces,
J
.
Electrochem. Soc.
134
, 2777, 1987.
396. Y. Nakato, T. Ueda, Y. Egi, and H. Tsubomura, Decomposition potentials of crystalline silicon as
related to the photocurrent stability of p-n junction silicon semiconductor electrodes,
J. Electrochem.
Soc.
134
, 353, 1987.
397. K. Watanabe, T. Tanigaki, and S. Wakayama, The properties of LPCVD
film deposited by
and mixtures,
J. Electrochem. Soc.
128
, 2630, 1981.
398. A. Bohg, Ethylene diamine-pyrocatechol-water mixture shows etching anomaly in boron-doped
silicon,
J. Electrochem. Soc.
118
, 401, 1971.
399. J. C. Greenwood, Ethylene diamine-catechol-water mixture shows preferential etching of p-n junc-
tion,
J. Electrochem. Soc.
116
, 1325, 1969.
400. J. N. Chazalviel, Photocurrent spectroscopy of interface states at a semiconductor-electrolyte junc-
tion,
J. Electrochem. Soc.
127
, 1822, 1980.
401. R. W. Ade and E. R. Fossum, Limitations of orientation dependent microstructure etching in silicon,
J. Electrochem. Soc.
134
, 3192, 1987.
402. S. Holdcroft and B. L. Funt, The energies of electron transfer at the polypyrrole/silicon interface,
J.
Electrochem. Soc.
135
, 3106, 1988.
403. E. D. Palik, O. J. Glembocki, and R. E. Stahlbush, Fabrication and characterization of Si membranes,
J
.
Electrochem. Soc.
135
, 3126, 1988.
404. M. J. Madou, W. P. Gomes, F. Fransen, and F. Cardon, Anodic oxidation of p-type silicon in methanol
as compared to glycol,
J. Electrochem. Soc.
129
, 2749, 1982.
405. T. Aoyama, T. Yamazaki, and T. Ito, Nonuniformities in chemical oxides on silicon surfaces formed
during wet chemical cleaning,
J. Electrochem. Soc.
143
, 2280, 1996.
406. D. K. Sohn, S. C. Park, S. W. Kang, and B. T. Ahn, A study of Cu metal deposition on amorphous Si
films from Cu solutions for low-temperature crystallization of amorphous Si films,
J. Electrochem.
Soc.
144
, 3592, 1997.
407. G. J. Norga, M. Platero, K. A. Black, A. J. Reddy, J. Michel, and L. C. Kimerling, Mechanism of
copper deposition on silicon from dilute hydrofluoric acid solution,
J. Electrochem. Soc.
144
, 2801,
1997.
408. S. Cattarin, J. N. Chazalviel, C. D. Fonseca, F. Ozanam, L. M. Peter, G. Schlichthorl, and J. Stumper,
In situ characterization of the
interface during dissolution in the current oscillation regime,
J
.
Electrochem. Soc.
145
, 498, 1998.
409. M. Niwano, T. Miura, and N. Miyamoto, Hydrogen exchange reaction on hydrogen-terminated (100)
Si surface during storage in water,
J
.
Electrochem. Soc.
145
, 659, 1998.
410. C. P. Wu, E. C. Douglas, C. W. Mueller, and R. Williams, Techniques for lapping and staining ion-
implanted layers,
J. Electrochem. Soc.
126
, 1982, 1979.
411. G. M. Rao, D. Elwell, and R. S. Feigelson, Electrowinning of silicon from
fluoride
systems,
J. Electrochem. Soc.
127
, 1940, 1980.
412. W. Kern and R. C. Heim, Chemical vapor deposition of silicate glasses for use with silicon devices,
J. Electrochem. Soc.
117
, 568, 1970.
413. L. A. Harris and J. A. Hugo, Thin platinum films on silicon,
J
.
Electrochem. Soc.
128
, 1203, 1981.
414. Y. Takeda, R. Kanno, O. Yamamoto, T. R. R. Mohan, C. H. Lee, and F. A. Kroger, Cathodic deposi-
tion of amorphous silicon from tetraethylorthosilicate in organic solvents,
J. Electrochem. Soc.
128
,
1221, 1981.
415. F. R. Fan, B. L. Wheeler, and A. J. Bard, Semiconductor electrodes XXXIX,
J. Electrochem. Soc.
128
,
2042, 1981.
416. Y. Nakato, Y. Iwakabe, M. Hiramoto, and H. Tsubomura, Tungsten or molybdenum coated p-n junc-
tion silicon electrodes for efficient and stable photoelectrochemical solar energy,
J. Electrochem. Soc.
133
, 1203, 1986.
417. A. K. Agrawal and A. E. Austin, Electrodeposition of silicon from solutions of silicon halides in aprotic
solvents,
J. Electrochem. Soc.
128
, 2292, 1981.
418. R. Noufi, D. Tench, and L. F. Warren, Protection of semiconductor photoanodes with photoelectro-
chemically generated polypyrrole films,
J. Electrochem. Soc.
128
, 2596, 1981.
