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and the cathodic current plateau indicates that for every two holes injected into the
valence band, one electron is injected into the conduction band.
Quantitative analysis of the data shows that a molecule is generated for two
dissolved Si atoms, indicating that the effective dissolution valence of silicon is 3.
According to Kooij et al. , 981 the etching reactions on p -Si and n- Si are different in terms
of the involvement of the charge carriers. For the p- Si the reaction is
and on
n
-Si the reaction is
The hydrogen ion reacts chemically with an
intermediate
The reduction of which provides holes for the oxidation of silicon, is consid-
ered to be a complex process involving multiple reaction steps.
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