Chemistry Reference
In-Depth Information
nonstoichiometric layer the Si/oxide interface, which is not likely to exist in the thermal
oxide film, must not fully responsible for the anodic current at the end of oxide film
etching. To generalize, it can thus be said that the current transient at the end of etching
of an anodic oxide film is due to the electrochemical processes involved in the transi-
tion from the silicon/oxide interface to the silicon/electrolyte interface. The amount of
charge involved in the etch-back may consist of (1) the oxidation of partially oxidized
