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increases with increasing oxide thickness up to a certain thickness as shown in
Fig. 5.48.
74
On the other hand, according to Serre
et al
.,
286
the current transient at the end of
etching of anodic oxide films in HF solutions is related to hydrogen termination. It
is argued that because an anodic charge, equivalent to a nonstoichiometric oxide of
~50 Å, is also passed at the end of etching of a thermal oxide, the presence of a
