Geoscience Reference
In-Depth Information
Here V
x
is the x-component of the material velocity in the SW, so that the term n
i
V
x
describes defects transfer due to the material motion. The flux caused by the electric
field is determined by the last term in Eq. (
9.7
). Here q
i
is the particle charge for the
given type,
i
is ion conductivity, and E
x
is the x-component of the electric field.
Notice that all functions in the right-hand side of Eq. (
9.7
) are taken at the point
x and at the time t, besides the functions
i
and
i
depend on temperature and
mechanical stresses in the SW. The analysis shows that the difference between the
functions
i
and
i
does not qualitatively change the resulting effect. Therefore in
what follows we assume that
i
D
i
D
i
.
Generalizing Eq. (
9.7
) to 3D case we obtain the vector of the flux density
f
i
D
a
2
r
.
i
n
i
/
C
n
i
V
C
i
E
=q
i
:
(9.8)
The first term of Eq. (
9.8
) describes, as before, the motion of the defects with
respect to atomic lattice. This term consists of two summands:
a
2
i
r
n
i
and
a
2
n
i
r
i
. The first summand is usual diffusion flux due to the gradient of the
number density of the defects and the value a
2
i
plays the role of diffusion
coefficient. The next term can occur at the constant value of n
i
. This flux arises
from the deformation and heating of the lattice, which affect the jump frequency,
i
,
of the defects. Below such effects are discussed in more detail.
The multiplication/reproduction rate of the defects under plastic deformation is
proportional to the time-derivative of the strain deviator, d
t
. As it follows from the
observations, the number density of the point defects amounts to 10
16
-10
17
cm
3
per each percent of plastic strain in a SW (e.g., Klein
1965
). The multiplication and
recombination of the defects can be accounted for in the continuity equation and is
given by
@
t
n
i
Cr
f
i
D
M
i
d
t
ki
n
k
n
i
:
(9.9)
Here M
i
is the coefficient of defect multiplication,
ki
is a recombination coefficient
of vacancies and interionic/interstitial ions. The first term on the right-hand side
of Eq. (
9.9
) describes the multiplication rate of defects whereas the second one
describes their recombination. It follows from the charge conservation law that
M
k
D
M
i
and
ki
D
ik
. Maxwell's equation for this case is
e
D
X
i
"
0
r
."
E
/
D
e
;
q
i
.n
i
n
i0
/;
(9.10)
where " is dielectric permittivity, n
i0
is initial number density of the defects, and
e
is electric charge density. The coefficients
ki
are proportional to both the particle
scattering cross-section (of the order of 4a
2
) and the particle velocity (of the order
of a), whence it follows that
ki
a
3
.
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