PERFORMANCE OF TXRF and GI-XRF ANALYSES - Total-Reflection X-Ray Fluorescence Analysis and Related Methods - page 282

Figure4.34. (a) Intensity/angle scan for a thin layer of cobalt ions implanted in a silicon wafer with
an energy of 100 keV. The fluorescence intensity of Co-K α and Si-K α is plotted against the glancing
angle. For the simulation, 30 sublayers were assumed with 6 nm thickness each, and the mole ratio
of Co ions and Si atoms was calculated. (b) The best fit between measuring points and theoretical
curve was reached for the final model represented by the stepped profile. The small triangles show
the molar ratio determined by RBS. Both profiles are shifted by about 6 nm against each other,
which may be caused by a difficult depth scaling.