Chemistry Reference
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Figure1.37. Dispersion of X-rays by refraction at a plane-parallel plate or a“rectangular prism,”
respectively. The incident polychromatic beam with several different photon energies strikes a
silicon wafer plate at a fixed glancing angle α 1 . The beam is reflected at the same angle with a small
intensity of only about 1% in the range of 0.1 ° to 0.2 ° as is indicated by a dashed line. In addition, the
beam is refracted under exit angles α 2 dependent on respective photon energies, E 2, with an
intensity of about 99% (after Ref. [78]). In a horizontal distance x dependent on α 2 and E 2 , all the
refracted beams leave the silicon plate at the original α 1 . The exit beam in total is parallel to the
incident primary beam but is shifted to the right in dependency of the energy E 2 . If the wafer has a
thickness of 0.5 mm the parallel shift is of the order of several 10 cm. A vertical shift of about some
10 μ m can be observed if the wafer is cut in a distance of 10 mm.
demonstrated in Figure 1.32b. 6 For glancing angles below the critical angle of
total reflection α 1 < α crit , there is no refracted beam but only the reflected beam
with an intensity of nearly 100%.
The glancing angle of the refracted exit beam α 2 for a given incident glancing
angle α 1 can be calculated in accord with Snell's law. We find the approximation
for the refractive index of a substance [78,81,82]:
α 1
2
α 2
2
n 2
1
(1.81)
Comparison with Equation 1.67 leads to
q
α 1
α 2
λ 2
λ cut
(1.82)
α crit
6 The wavelength of the refracted beam is increased negligibly by 1/ n 2 ; that is, by a factor smaller
than 1.0005 for silicon or quartz glass.
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