Chemistry Reference
In-Depth Information
Fig. 6.22
ISOLDE lay-out
A very nice example of the power of Mössbauer spectroscopy was the dem-
onstration [
37
] of site selective doping of compound III-V semiconductors such as
GaAs, where it was concluded from the measured
119
Sn isomer shift that
implanted In and Sb radioactive parent ions selectively populate III and V sites
respectively.
6.4.2 Charge-State Dependent Diffusion of Fe in Si
As stated in the beginning of this tutorial, there are three different types of
emission Mössbauer spectroscopy methods to study Fe in Si. They differ by the
lifetime of the parent atom. We have first discussed in
Sect. 6.2
, the off-line
experiments using the
57
Co radioactive parent with T
1/2
= 270 d. We then men-
tioned in the
Sect. 6.3
the in-beam experiments using the
57m
Fe parent with T
1/
2
= 10
-6
s. The third emission Mössbauer spectroscopy method makes use of a
much shorter lived parent than
57
Co namely
57
Mn with a lifetime of T
1/
2
= 1.5 min. Two experimental facilities are nowadays making use of this method
in on-line experiments: the ISOLDE facility at CERN and the RIKEN facility in
Tokyo. These are huge experimental facilities to which access is granted through
