Chemistry Reference
In-Depth Information
57
57m
Fig. 6.12
Fe spectra after in beam ion implantation of
Fe at 50 K and after subsequent
annealing [
26
]
lattice sites and defect configurations after implantation. They offered substantially
less difficulties in terms of interpretation compared to Fe in Si. The difference in
the chemical nature of these elements is responsible for this less-complicated
behavior. On one hand we have the transition metals with their extremely small
solubility and extremely high diffusion coefficient in Si, and on the other hand we
have an element like Sn, isoelectronic and isostructural with the other group IV
semiconductor constituents, and the neighboring elements that can replace host
atoms in III-V and II-VI semiconductors, or act as natural substitutional donors or
acceptors in these semiconductors.
6.3 In-beam
57m
Fe Implantation Mössbauer Studies
at the Hahn-Meitner Institute in Berlin
6.3.1 In-beam Mössbauer Spectroscopy Technique
The Stanford group was the first to perform in-beam Mössbauer experiments on
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Fe. The principle of the experiment is to excite stable
57
Fe atoms from their ground
