Chemistry Reference
In-Depth Information
Chapter 6
Ion Implantation
G. Langouche and Y. Yoshida
Abstract In this tutorial we describe the basic principles of the ion implantation
technique and we demonstrate that emission Mössbauer spectroscopy is an extre-
mely powerful technique to investigate the atomic and electronic configuration
around implanted atoms. The physics of dilute atoms in materials, the final lattice
sites and their chemical state as well as diffusion phenomena can be studied. We
focus on the latest developments of implantation Mössbauer spectroscopy, where
three accelerator facilities, i.e., Hahn-Meitner Institute Berlin, ISOLDE-CERN and
RIKEN, have intensively been used for materials research in in-beam and on-line
Mössbauer experiments immediately after implantation of the nuclear probes.
6.1 Introduction
Among the techniques that can be used to introduce well defined concentrations of
impurities into semiconductors, ion implantation turns out to possess particularly
attractive properties. It is not dependent on the diffusivity nor the solubility of the
dopant atom in the semiconductor host, the substrate does not have to be heated as
in a diffusion process, the dosage and the depth distribution of the impurity can be
well controlled. On the other hand, in those first years around 1960 when the
