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Fig. 15 Re( Δr / r ) versus
photon energy for clean
InAs(001) surfaces obtained
after annealing at different
temperatures: ( a ) 340 C
(LEED pattern: 2 4); ( b )
T
¼ 450 C (LEED pattern:
4 2). Each curve is
referred to its own zero line
(From Goletti et al. [ 49 ])
Fig. 16 Δε 2 00 d versus
photon energy for clean
InAs(001) surfaces. Δε 2 00
(here indicated as Δε s 00 )is
the anisotropy of the
imaginary part of the
surface dielectric function
between directions [11 0]
and [110] of the clean
surface and has been
computed from
experimental curves
reported in Fig. 15 . d is the
thickness of the surface
layer. Each curve has its
own zero line (From Goletti
et al. [ 49 ])
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