Information Technology Reference
In-Depth Information
Table 2. Comparison of estimated time for evaluating leakage current
Mode of
Operation
Time taken by
Hspice Simulator
Time taken by the
proposed model
Improvement in speed by our
model over HSPICE result
Idle Phase
1.062057 Sec
7.387 msec
143 times
Read Phase
0.706034 Sec
5.537 msec
127 times
Write Phase
1.455412 Sec
4.412 msec
330 times
6
Conclusion
In our work, we have estimated the width dependent leakage current of SRAM core at
an early stage. We have proposed an analytical model of SRAM based on its mode of
operation and structure .The proposed model have been compared with the design
mentioned in [1] and the actual results (HSPICE simulation) .Our work shows higher
accuracy than previous work with an error margin less than 5%.The timing analysis
shows that our results obtained are many folds faster than the golden results.
References
1. Mamidipaka, M., et al.: Leakage Power Estimation in SRAMs. CECS Technical report,
TR 03-32, UC Irvine (October 2003)
2. Butts, J.A., Sohi, G.S.: A static power model for architects. In: International Symposium
on Microarchitecture, pp. 191-201 (2000)
3. Chen, X., Peh, L.: Leakage power modeling and optimization in interconnection networks.
In: International Symposium on Low Power Electronics and Design (2003)
4. Jiang, W., Tiwari, V., Iglesia, E., Sinha, A.: Topological analysis for leakage prediction of
digital circuits. In: VLSI Design 2002, pp. 39-44 (2002)
5. Mamidipaka, M., Khouri, K., Dutt, N., Abadir, M.: Idap: A tool for high level power
estimation of custom array structures. In: International Conference on Computer Aided
Design (2003)
6. SIA. International technology roadmap for semiconductors. Technical report,
http://public.itrs.net/
7. Weste, N., Eshragian, K.: Principles of CMOS VLSI Design, A Systems Perspective.
Addison-Wesley Publishing Company, Reading (1998)
8. Zhang, Y., Parikh, D., Sankaranarayanan, K., Skadron, K., Stan, M.: Hotleakage: A
temperature-aware model of subthreshold and gate leakage for architects. Technical Report
CS-2003-05, Univ. of Virginia (March 2003)
9. Zhang, F., Luo, R., Liu, Y., Wang, H., Yang, H.: Leakage Power Modeling Method for
SRAM Considering Temperature, Supply Voltage and Bias Voltage. In: Proceedings of
ICSICT 2006, Shanghai, China, October 23-26, pp. 1180-1182 (2006)
10. Mamidipaka, M., et al.: Analytical Models for Leakage Power Estimation of Memory
Array Structures CODES+ ISSS 2004, September 8-10 (2004)
 
Search WWH ::




Custom Search