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Conclusions
In this work, we have proposed, Schmitt Trigger based asymmetric SRAM cell
configuration that is not only robust against process variations but suitable for ultra
low power applications also. The in-built feedback mechanism and asymmetry make
it a suitable choice for low voltage and process tolerant operation. Asymmetrical
configuration also makes this cell capable of tolerating more mismatch in neighboring
transistors. Simulation results establish the effectiveness of the proposed cell.
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