Information Technology Reference
In-Depth Information
Each transmission line in the equivalent
RLC
model of Fig. 2 comprises of
magnetic inductance (
L
M
) that can be represented as the stored energy for a given
amount of current flow. On the other hand, the kinetic inductance (
L
K
) arises mainly
because of the charge carrier inertia and can be expressed as [14]
h
L
K
0
(8)
L
=
;
where L
K
=
K
N
0
2
2
ev
F
where
v
F
is the Fermi velocity of graphene and CNT which is equal to 8×10
5
m/s [13].
Apart from this, the
RLC
model of Fig. 2 consists of quantum capacitance that arises
due to the density of electronic states in CNTs and can be formulated as [14]
2
2
e
(9)
CNC
=
.
;
here C
=
Q
Q
0
Q
0
hv
F
3
Simulation Setup
This section analyzes the propagation delay under the influence of crosstalk for
bundled MWCNT having different numbers of shells at interconnects lengths of
100ʼm. The equivalent
RLC
model of bundled MWCNT represents the capacitively
coupled interconnect lines as shown in Fig. 3. Simulation setup uses CMOS driver at
32nm technology node in which the technology parameters (length and width) for
NMOS is taken as 32nm and 640nm and for PMOS, these parameters are taken as
32nm and 1280nm, respectively. Using the process induced bundle height and width
variations, the average deviation in crosstalk is analyzed for different bundled
MWCNT by invoking the Monte Carlo simulations with 100 different samples. The
interconnect line is terminated by a load capacitance
C
L
= 10fF.
V
DD
Aggressor
Bundled MWCNT 1
V
in
C
L
C
CM
V
DD
Victim
Bundled MWCNT 2
V
in
C
L
Fig. 3.
Capacitively coupled interconnect lines
