Information Technology Reference
In-Depth Information
Table 1.
Comparison table of various reference circuits
References
Parameters
[4]
[5]
This
Work
Year
2011
2007
2013
CMOS Technology
(µm)
0.09
0.25
0.18
Temperature Range
(°C)
−
40~125
0~120
−
40~125
Supply Voltage (V)
1.6
3.3
1.8
V
REF
(mV)
771
N/A
776.4
I
REF
(µA)
N/A
10.45
50.11
Temperature Coeffi
cient (TC)
For Current Reference
For Voltage Reference
(ppm/°C)
7.5
N/A
720
N/A
93
295
Supply Dependency
For Current Reference
For Voltage Reference
(ppm/V)
N/A
N/A
1700
N/A
285
347
Chip Area (mm
2
)
0.03
0.002
0.002
4
Conclusion
A Combined Voltage and Current Reference Circuit has been proposed in
standard 180 nm CMOS process that exhibits excellent supply and Temperature
independency. The design of CMOS Current generator is by simply subtracting two
current outputs with the same dependencies on the supply voltage and temperature.
While for Voltage generator we used the Active load, which gives the fix value
of voltage with variations in supply voltage and temperature. Achieved results show
that developed Architecture of combined reference can be easily used for oscillators
and many other mixed signal integrated circuits with better Supply and Temperature
dependency.
References
1.
Leung, K.N., Mok, P.K.T.: A sub-1-V 15 ppm/°C CMOS bandgap voltage reference without
requiring low threshold voltage device. IEEE J. Solid-State Circuits 37, 526-530 (2002)
2.
Tanaka, H., Nakagome, Y., Etoh, J., Yamasaki, E., Aoki, M., Miyazawa, K.: Sub-1V A dy-
namic reference voltage generator for battery operated DRAMs. IEEE J. Solid-State Cir-
cuits 29(4), 448-453 (1994)
