Impact of Fin Width and Graded Channel Doping on the Performance of 22nm SOI FinFET - VLSI Design and Test - page 159

4 Conclusion

Performance variation of 22nm n-channel FinFET subjected to different fin widths
and channel graded doping have been analyzed in this work. For better performance,
one needs to scale the fin width down to 10nm or lesser, taking the stability of the as
formed fin into consideration. Graded doping in the channel helps one to improve the
performance of FinFET for analog applications.

Acknowledgement. Authors wish to acknowledge INUP, IIT-Bombay for providing
access to Sentaurus TCAD for this work.

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