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where,
H = pyramidal height
h = H height of trapezoid
V s = Volume of upper block
E = Young's modulus of sin
a = Acceleration
, = effective piezores
directions, respectively
, = stress in lateral and
dal proof-mass (310 µm)
k
ngle crystal silicon (SCS) = 170 GPa
istive coefficient of polysilicon in lateral and transve
erse
transverse directions respectively.
4
Finite Element A
Analysis
A finite element method b
COMSOL. For same config
along the beam length, obta
based simulations are carried out using MEMSCAD t
gurations the von-Mises stress and total deflection variati
ained by simulations are shown in Figs. 3-4, respectively.
tool
ions
.
Fig. 3. Beam length vs. von
n-Mises stress
Fig. 4. Beam length vs. displacement
F
Fig. 5. First mode natural frequency
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