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dx e x r x ˇU.r/ .x ˇU.a// a 2
Z
2
p
G a .r;R/ D
r 2 :
ˇU.a/
Using the identities F.R/ D G a .R;R/ and G o .R;R/ D e ˇU.R/ yields again
1 C e ˇU.R/ F.R/ e ˇU.R/ e ˇU.r/
C G a .r;R/ :
n.R/
n.r/ D
3.6.3
Flux and Charging Efficiency
The expression for the flux follows from Eq. 3.29 :
Z
4 2
m 3 C.R/
e ˇ.ECjU.R/j/ L a dE:
J.a;R;n R / D
(3.168)
jU.R/j
Hence,
2
3=2
Z
8 2
m 3
1
1 C e ˇjU.R/j F.R/
e ˇ.ECˇjU.R/j/ L a dE
˛ fm .a;R/ D
ˇjU.R/j
o
1 C e ˇjU.R/j F.R/ :
D
(3.169)
Dependence on the matching distance R is clearly seen. It enters via the multiplier
1=.1 C F.R// and in the lower limit of the integral. The latter fact means that the
bound states of ions in the potential U.r/are taken into account. The value ˛ o differs
from ˛ fm by the lower limit of integration over E ( j U.R/ j instead of 0).
In the case of nonsingular repulsion, the result looks as follows:
2
3=2
Z
8 2
m 3
1
1 C e ˇU.R/ F rep .R/
e ˇ . EU.R/ / L a dE
˛ fm .a;R/ D
ˇU.R/
2e ˇU.a/ ˛ fm .a/
1 C e ˇU.R/ F rep .R/ :
D
 
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