Fabrication technologies - Micromixers Fundamentals Design and Fabrication - page 156

silicon-based to polymeric to metallic opens an enormous potential and freedom for designing
micromixers.

References
[1] M.J. Madou, Fundamentals of Microfabrication: The Science of Miniaturization, 2nd ed., CRC Press,
Boca Raton, FL, 2002.
[2] L.F. Thompson, C.G. Willson, M.J. Bowden, Introduction to Microlithography, American Chemical
Society, Washington, D.C, 1994.
[3] H. Friedrich, D. Widmann, H. Mader, Technologie Hochintegrierter Schaltungen, Springer-Verlag,
Berlin, 1996.
[4] A.C. Adams, Dielectric and polysilicon film deposition, in: S.M. Sze (Ed.), VLSI Technology, McGraw-
Hill, New York, 1988, pp. 233 e 271.
[5] G. Monreal, C.M. Mari, The use of polymer materials as sensitive elements in physical and chemical
sensors, J. Micromech. Microeng. 7 (3) (1997) 121 e 124.
[6] D. Soane (Ed.), Polymer Applications for Biotechnology: Macromolecular Separation and Identification,
Prentice-Hall, Upper Saddle River, NJ, 1992.
[7] G.T.A. Kovacs, N.I. Maluf, K.E. Petersen, Bulk micromachining of silicon, in: Proceedings of the IEEE,
vol. 86, 8, 1998, pp. 1536 e 1551.
[8] K.R. Williams, R.S. Muller, Etch rates for micromachining processing, J. Microelectromech. Syst. 5 (4)
(1996) 256 e 269.
[9] K.E. Bean, L. Csepregi, A. Heuberger, H. Baumgartel, Anisotropic etching of crystalline silicon in
alkaline solutions II: Influence of dopants, J. Electrochem. Soc. 137 (11) (1990) 3626 e 3632.
[10] G. Kaminsky, Micromachining of silicon mechanical structures, J. Vac. Sci. Tech. B3 (4) (1985)
1015 1024.

[11] W. Kern, Chemical etching of silicon, germanium, gallium arsenide and gallium phosphide, RCA Review
39 (1978) 278 e 308.
[12] U. Schnakenberg, W. Benecke, B. L ¨ chel, S. Ullerich, P. Lange, NH 4 OH Based etchants for silicon
micromachining: influence of additives and stability of passivation layers, Sens. Actuators A Phys. 25
(1 e 3) (1990) 1 e 7.
[13] O. Tabata, H. Asahi, H. Funabashi, K. Shimaoka, S. Sugiyama, Anisotropic etching of silicon in TMAH
solutions, Sens. Actuators A Phys. 34 (1) (1992) 51 e 57.
[14] U. Schnakenberg, W. Beneke, P. Lange, TMAHWetchants for silicon micromachining, in: Proceedings of
Transducers '91, 6th International Conference on Solid-State Sensors and Actuators, San Francisco,
23 e 27 June, 1991, pp. 815 e 818.
[15] K.E. Petersen, Silicon as a mechanical material, in: Proceedings of IEEE, vol. 70, 1982, pp. 420 e 457.
[16] M. Mehregany, S.D. Senturia, Anisotropic etching of silicon in hydrazine, Sens. Actuators A Phys. 13 (4)
(1988) 375 e 390.
[17] H. Linde, L. Austin, Wet silicon etching with aqueous amine gallates, J. Electrochem. Soc. 139 (4)
(1992) 1170 e 1174.
[18] V. Lehmann, Porous silicon—A new material for MEMS, Proceedings of MEMS '96, 9th IEEE inter-
national workshop micro electromechanical system, San Diego, CA, 11 e 15 February, 1996, pp. 1 e 6.
[19] P. L¨rmer, Method of Anisotropically Etching Silicon, German Patent DE 4 241 045, 1994.
[20] D. Sobek, S.D. Senturia and M.L. Gray, Microfabricated Fused Silica Flow Chambers for Flow
Cytometry, Technical digest of the IEEE solid state sensor and actuator workshop, Hilton Head Island,
SC, 13 e 16 June, 1994, pp. 260 e 263.

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