Database Reference
In-Depth Information
Word line
Chalcogenide
GeSbTe or
“GST”
Access diode
Amorphous
state
Crystalline
state
'Heater'
wire
Insulator
Bit line
(a)
Probe tip pitch
100 × 100
2 mm
Media
Sled
Tip
arrays
1 cm
Media
coating on
bottom
surface
1 cm
Sled motion - 100 × 100
Media
Proximal
probe tip
XYZ movable
suspension
(b)
Figure 1.5
(See color insert following page 224.) Part (a) shows a schematic
of a single cell of a phase-change memory cell that uses electrically induced
heating to induce phase changes in the embedded Chalcogenide (GeSbTe) ma-
terial. Part (b) shows the architecture of the Micro-Electro-Mechanical system
(MEMS)-based Millipede storage system that employs small STM heads to
directly manipulate a polymer medium for storage.
