Chemistry Reference
In-Depth Information
2.3 A Possible Mechanism for the Ni
2
In
!
TiSi
2
!
MgCu
2
Transitions
Finding a topological mechanism for the Ni
2
In
MgCu
2
transitions is a
difficult task. However, we have discovered new structural relationships between
both the Ni
2
In and the TiSi
2
structures, which deserve a special discussion that is
presented next.
regarded as a superstructure of the AlB
2
type (MgB
2
). In this structure, both
graphite-like (6
3
planar nets) and
hcp
(3
6
) layers alternate along the
c
axis, as
shown in Fig.
5a
. Hereafter, these layers will be denoted as G (graphite-like) and
H (hexagonal).
In AlB
2
, the G layers are formed by only B atoms, whereas in Ni
2
In they are
formed by both Ni(2) and In atoms, producing in this way a doubling of the
c
axis
It is worthy of mention that the G and H layers are complementary in such a way
that the atoms of the H layer are capping the centre of the graphene hexagons.
Thus, compression of either the AlB
2
or the Ni
2
In structures, along the
c
axis,
would result in the formation of a denser, hexagonal close packed (
hcp
) layer
(G + H) stacked in the
!
TiSi
2
!
sequence. These layers are identical to those
of TiSi
2
, although in this last case they are stacked in the
...
AAAA
...
...
ABCDABCD
...
sequence. Such a filled hexagon (G
þ
H) is drawn in Fig.
3a
and one complete
layer is drawn in Fig.
5c
.
a
b
c
d
Fig. 5 (a) The structure of AlB
2
showing the G (boron,
yellow
atoms) and H (aluminium,
grey
atoms) layers. (b) The Ni
2
In-type structure to illustrate the intergrowth of G (NiIn) and H (Ni)
H) layer
which forms the TiSi
2
(
C
54) structure. Both the Si (
grey spheres
) and Ti atoms (
green spheres
) are
projected on the
ab
plane to show the similarity with the (G
þ
þ
H) layers