Chemistry Reference
In-Depth Information
Fro
m
all this,
i
t is clear that there are only two immediate supergroups of
P
a3,
viz.
I
a
3 and
F
m
3.
4.1 Substructures in the Space Group Pa
3
4.1.1 Molecular N
2
at 20 K
a
3 space group itself. A study of the
We look first for substructures in the
P
a
-N
2
at
a
3, with coordinates 0.0530, 0.0530,
0.0530. The comparable component of
b
-Li
7
VN
4
is the Li(1)N
4
tetrahedron, thus
accounting for the greater cell edge of
b
-Li
7
VN
4
compared with that of N
2
5.661
˚
). In the N
2
structure, the N-N distance is 1.04
˚
, whereas the
Li(1)-Li(1) distance in
(
a
¼
-Li
7
VN
4
is 4.47
˚
.
molecules in Fig.
17a
.
There are two important features arising here, one being that we can consider the
V atoms, belonging to Group 15, to be behaving as N
2
molecules, despite being at
the centres of VN
4
tetrahedra. Looked at differently, we have the electron count for
the VN
4
tetrahedra as 51, corresponding to
b
-
(51)
Sb, also in Group 15. And even
more surprising is the following: the eight LiN
4
tetrahedra have a total electron
count of 31 electrons each, and we can then allow each to accept two electrons from
the remaining Li atoms to form
C
-BN
4
tetrahedra, with an electron count of 33
each, just the count for As, also belonging to Group 15. Thus, both the LiN
4
and the
VN
4
tetrahedra are behaving structurally as
C
-Sb, respectively. In
addition, the complete set of V(1)N
4
and Li(1)N
4
tetrahedra (formed by combining
array resembles the structure of high-pressure
C
-As and
C
g
-Si, drawn in Fig.
17e
. This insight
led to the novel interpretation of the “stuffed” bixbyite structures reported by Vegas
g
-Si(Ge) structure is,
in fact, formed by two interpenetrating nets of the high-pressure, high-temperature
cules: instead, the N atoms form a 3D skeleton as shown in Fig.
17e
.
A careful comparison of Fig.
17d-f
can help to understand the process. Follow-
ing the 8-N rule, in
-Si(Ge) (Fig.
17e
) each Ge atom forms four similar bonds
(2.40-2.48
˚
). If we assume that each Si atom accepts one electron, the resulting
N (Si
1
g
means pseudo, must be three-connected, forming thus
equal nets that were forming the
¼ C
(P)), where
C
-Si(Ge) structure.
This can be clearly seen in Fig.
17f
which represents the [VLi(1)] sub-array in
g
b
C
-[BV], as in the III-V compounds, should also be four-
3.91
˚
),
connected. However, the four (
C
-B)-V distances are unequal (3
3.40; 1