Biomedical Engineering Reference
In-Depth Information
Ru ( bpy ) 3 3 + + C 2 O 4 2 Ru ( bpy ) 3 2 + + C 2 O 4 ·−
(4.2)
C 2 O 4 ·− CO 2 ·− +
CO 2
(4.3)
Ru ( bpy ) 3 3 + + CO 2 ·− Ru ( bpy ) 3 2 +∗ + CO 2
(4.4)
Ru ( bpy ) 3 2 + + CO 2 ·− Ru ( bpy ) 3 + + CO 2
(4.5)
Ru ( bpy ) 3 3 + + Ru ( bpy ) 3 + Ru ( bpy ) 3 2 +∗ + Ru ( bpy ) 3 2 +
(4.6)
Ru ( bpy ) 3 2 +∗ Ru ( bpy ) 3 2 + + H ν
(4.7)
Other common coreactants include peroxydisulfate (persulfate, S 2 O 8 2 ), tri-
n-propylamine (TPrA) and other amine-related derivatives, hydrogen perox-
ide (H 2 O 2 ). The main organic luminants contain luminal, tris(2,2′-bipyridine)
ruthenium(II)
Ru ( bpy ) 2 +
and their derivatives.
3
4.1.1 ECL of Semiconductor QDs
The first QDs ECL behavior was studied by Bard et al. In 2002, they first reported
the silicon QDs ECL property [ 1 ]. The Si QDs have the ability to store charge
in N , N ′-dimethylformamide and acetonitrile, which can subsequently lead to light
emission upon electron and/or hole transfer. This quality provides electrochemi-
cally sensitive optoelectronic properties. In 2006, they observed the ECL emis-
sion from silica NPs in aqueous solution [ 25 ]. By using S 2 O 8 2 as the coreactant,
octadecyl-protected silica NPs deposited on indium tin oxide (ITO) showed ECL
in both anodic and cathodic sweep potentials. In the negative potential scans, the
Si NP film could produce a large ECL signal when the potential beyond 0.95 V.
The principle was described as follows:
S 2 O 8 2 + e SO 4 2 + SO 4
(4.8)
SO 4 SO 4 2 + h +
(4.9)
Si + e Si
(4.10)
Si + h + Si + light
(4.11)
The elemental and compound semiconductors, such as Ge [ 2 ], CdTe [ 26 ], PbS
[ 27 ], CdSe [ 28 , 29 ], and ZnS [ 30 ], can also generate efficient ECL. The ECL mecha-
nism of semiconductor QDs mainly depends on the annihilation or coreactant ECL
reaction. For example, PbS QDs can form oxidized (R ·+ ) and reduced (R ·− ) QDs dur-
ing potential cycling. Two oppositely charged QDs can collide to yield an excited QD
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