The Preparation of III–V Semiconductor Nanomaterials - Semiconductor Quantum Dots: Organometallic and Inorganic Synthesis - page 53

CHAPTER 2

d n 1 y 4 n g | 3

The Preparation of III - V
Semiconductor Nanomaterials

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So far, we have described the synthesis of II VI quantum dots (QDs), as these

materials are the easiest to prepare and analyse (having optical properties
mainly in the visible region) with a wide varieties of structures accessible
from simple precursors. There are, however, numerous other families of
semiconductors that can be prepared as QDs using related chemistry, again
inspired by the seminal paper describing trioctylphosphine oxide (TOPO) as
a capping agent. 1 These new materials are o en used to access regions of the

optical spectrum not normally obtainable using typical CdSe-based QDs,
although the chemistry is quite clearly similar.

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2.1 Properties and Applications of III V Materials

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III V materials are a common family of semiconductors with numerous

optoelectronic applications. InP has a bandgap of 1.27 eV and an excitonic
diameter of 21 nm, whereas indium arsenide (InAs) is a narrow-bandgap
material with a bandgap of 0.36 eV and an excitonic diameter of 74 nm. InSb
has a bandgap of 0.165 eV and an excitonic diameter of an estimated 138 nm,
while GaSb has a bandgap of 0.67 eV and an excitonic diameter of 40 nm. 2
A

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V family might be considered the next
most popular materials, with numerous publications describing the optical
properties and physical characteristics of TOPO-capped InP and InAs,
including Raman spectra, 3 exciton recombination kinetics, 4 anti-Stokes
luminescence from surface states, 5 excited-state spectroscopy, 6 coupling in
particle lattices 7 and

er the II - VI family of QDs, the III -

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 uorescence intermittency. 8 Key studies include the