Chemistry Reference
In-Depth Information
Castro Neto AH, Guinea F, Peres NMR, Novoselov KS, Geim AK (2009) The electronic properties
of graphene. Rev Mod Phys 81:109-162
Datta SS, Strachan DR, Mele EJ, Johnson ATC (2009) Surface potentials and layer charge
distributions in few-layer graphene films. Nano Lett 9:7-11
Elias DC, Gorbachev RV, Mayorov AS, Morozov SV, Zhukov AA, Blake P, Ponomarenko LA,
Grigorieva IV, Novoselov KS, Guinea F, Geim AK (2011) Dirac cones reshaped by interaction
effects in suspended graphene. Nat Phys 7:701-704
Fallahazad B, Hao Y, Lee K, Kim S, Ruoff RS, Tutuc E (2012) Quantum hall effect in Bernal
stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition. Phys Rev B
85:201408-201413
Frindt RF, Yoffe AD (1963) Physical properties of layer structures: optical properties and
photoconductivity of thin crystals of molybdenum disulphide. Proc R Soc A 273:69-83
Hwang C, Siegel DA, Mo SK, Regan W, Ismach A, Zhang Y, Zettl A, Lanzara A (2012) Fermi
velocity engineering in graphene by substrate modification. Sci Rep 2:590
Jellison GE, Hunn JD, Lee HN (2007) Measurement of optical functions of highly oriented pyrolytic
graphite in the visible. Phys Rev B 76:085125-085133
Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY et al
(2012) High-mobility and low-power thin-film transistors based on multilayer MoS
2
crystals.
Nat Commun 3:1011-1018
Lembke D, Kis A (2012) Breakdown of high-performance monolayer MoS
2
transistors. Nano Lett
6:10070-10075
Li Y, Xu C-Y, Zhen L (2013) Surface potential and interlayer screening effects of few-layer MoS
2
nanoflakes. Appl Phys Lett 102:143110-143114
Liang X, Chang ASP, Zhang Y, Harteneck BD, Choo H, Olynick DL, Cabrini S (2009) Electrostatic
force assisted exfoliation of prepatterned few-layer graphenes into device sites. Nano Lett 9:467-
472
Mak KF, Lui CH, Shan J, Heinz TF (2009) Observation of an electric-field-induced band gap in
bilayer graphene by infrared spectroscopy. Phys Rev Lett 102:256405-256409
Mak KF, Lee C, Hone J, Shan J, Heinz TF (2010) Atomically thin MoS
2
: a new direct-gap
semiconductor. Phys Rev Lett 105:136805-136809
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS
2
transistors.
Nat Nanotechnol 6:147-150
Reed JP, Uchoa B, Joe YI, Gan Y, Casa D, Fradkin E, Abbamonte P (2010) The effective fine-
structure constant of freestanding graphene measured in graphite. Science 330:805-808
Sanchez-Yamagishi JD, Taychatanapat T, Watanabe K, Taniguchi T, Yacoby A, Jarillo-Herrero P
(2012) Quantum hall effect, screening, and layer-polarized insulating states in twisted bilayer
graphene. Phys Rev Lett 108:076601-076606
Santos EJG, Kaxiras E (2013a) Electric-field dependence of the effective dielectric constant in
graphene. Nano Lett 13:898-902
Santos EJG, Kaxiras E (2013b) Electrically-driven tuning of the dielectric constant in MoS
2
layers.
ACS Nano 7:10741-10746
Siegel DA, Park CH, Hwang C, Deslippe J, Fedorov AV, Louie SG, Lanzara A (2011) Many-body
interactions in quasi-freestanding graphene. Proc Natl Acad Sci 108:11365-11370
Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS (2012a) Electronics and optoelec-
tronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699-712
Wang Y, Brar VW, Shytov AV, Wu Q, Regan W, Tsai HZ, Zettl A, Levitov LS, Crommie MF
(2012b) Mapping Dirac quasiparticles near a single Coulomb impurity on graphene. Nat Phys
8:653-657
Zhang X, Hayward, DO, Mingos DMP (2002) Dielectric properties of MoS
2
and Pt catalysts: effects
of temperature and microwave frequency. Catal Lett 84:225-233
Zhang Y, Tang TT, Girit C, Hao Z, Martin MC, Zettl A, Crommie MF, Shen YR, Wang F (2009)
Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459:820-823
Zou K, Zhang F, Clapp C, MacDonald AH, Zhu J (2013) Transport studies of dual-gated ABC and
ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular
electric fields. Nano Lett 13:369-373