Environmental Engineering Reference
In-Depth Information
V
ac
C
o
Filter IPEM
Active IPEM
Passive IPEM
Figure 6.4 Integrated power electronic module ( from Reference 2)
150-200
C will operate well beyond 20 kHz and up to 10 kV at device level. GaN,
already capable of 50 A power processing, can switch in the MHz range. Figure 6.5
illustrates technology maturation according to a figure of merit (FOM).
Semiconductor device technology
Si bipolar
BJT
VFET
HEXFET
Trench FET
Super junction
SiC
Next gen Si (?)
Limits of silicon
GaN
SiC
Unipolar
10 KV 20 kHz
SiC
bipolar
20 KV
50 kHz
VHF
pwr Conv
1970
1980
1990
2000
2010
2020
Time (years)
Figure 6.5 Semiconductor performance including wide bandgap devices
Power electronics, as it applies to ac drives for hybrid vehicle propulsion, will
be discussed now in depth in the following sections of this chapter.
