Environmental Engineering Reference
In-Depth Information
Table 4.12 (Continued)
Symbol
Acronym Description
Date
invented
Invented
by
Developed
by
K
GTO
Gate turn-off
thyristor
1970
GE
RCA,
Toshiba,
Siemens
G
A
SIT
Static induction
transistor
1975
Japan
Tokin
C
IGBT
Insulated gate
bipolar
transistor
1982
GE
GE/Harris,
Motorola,
others
G
E
SITh
Static induction
thyristor
1986
Japan
Japan
A
MCT
MOS controlled
thyristor
1988
GE
Harris
G
EST/ETO Emitter switched
thyristor, now
called emitter
turn-off
thyristor
1990
NCSU
PSRC,
Infineon
K
ACBT
Accumulation
channel (driven)
bipolar
transistor
1995
NCSU
PSRC
C
CSTBT
Charge stored
trench bipolar
transistor
2000
IR
IR, others
G
E
NCSU: North Carolina State University; PSRC: Power Semiconductor Research Center.
4.3.3 Ripple capacitor design
Power electronic inverters may have as much as 60% of their volume taken by the
dc link capacitors needed for bypassing the load ripple currents. The dc bus capa-
citor is sized not so much for energy or hold-up time, but thermally by the rms
ripple current it must circulate. First-principle understanding of inverters states that
no energy storage occurs in the inverter, only switching elements. However, the
high frequency currents generated by the inverter switching are sourced by the dc
link capacitor, particularly if the battery is located far from the inverter. In hybrid
propulsion systems when the inverter is required to be packaged within 1 m of the
M/G to minimize EMI, it is the bus capacitors that source and sink the switching
frequency components. The battery in effect keeps the capacitor bank charged by
supplying the real power demand.
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