Sizing the drive system - Propulsion Systems for Hybrid Vehicles - page 179

right into the silicon die and central to the main BIGT chip. This enables more compact
converters, a packaging requirement for active parallel ESS.
For the classical 2-level voltage source inverter (VSI) the required IGBT vol-
tage rating for repetitive blocking for given nominal line-line rms voltage is shown
in Table 4.11.

Table 4.11 IGBT blocking voltage rating for given line voltage [29]

Repetitive blocking
volt

Dc link voltage
(cosmic ray derated)

Line-line rms
voltage

1,200 620 400

1,700 1,070 690

4,500 2,800 1,700

Table 4.12 lists the major power semiconductor devices, their accepted sche-
matic symbol, and various details regarding development and market introduction.

Table 4.12 Power semiconductor evolution

Symbol Acronym Description Date

invented

Invented
by

Developed
by

C

BJT Bipolar junction

transistor

1948 Bell

Labs

RCA, others

B

E

S S

FET Junction

field effect
transistor

1952 Bell

Labs

RCA, others

G

G

D

D

K

SCR Silicon controlled

rectifier

1956 GE GE

G

A

K

TRIAC Triode ac switch 1965 GE GE

G

A

MOSFET Metal oxide
semiconductor
field effect
transistor

~1970

D

G

S

FCT Field controlled

thyristor

1971 Japan Japan

(Continues)